https://arxiv.org/api/+PAOK+KHNyLmefG+X55aZ9u4Ows 2026-09-10T20:16:57Z 24198 45 15 http://arxiv.org/abs/2609.05898v1 2026-09-05T05:47:17Z

Simple synthesis of graphitic compounds, their high conductivity, and integrability with other materials motivate the effort toward graphite-based thermoelectric generators. At the same time, semimetallic nature of graphite and graphene results in nearly-zero thermopower due to electron-hole compensation. Here, we observe large transverse thermopower in chemically derived multilayer graphene films with strong fluctuations of thickness and carrier density at low magnetic fields $B$. Using the scanning laser-induced heating of macroscopic film, we find that transverse (Nernst) thermoelectric voltage becomes comparable to the longitudinal thermoelectric voltage at the metal-doped graphene contact at $B^*\approx4$ mT and ambient conditions. Estimates of transverse thermopower $S_{xy}$ based on the known laser-induced temperature show that it is as large as $\sim 10$ $μ$V/K at $B^*$, and raises in a sub-linear fashion to 250 $μ$V/K at $B\approx315$ mT, the maximum field we reach with centimeter-sized permanent magnet. Extra increase in thermoelectric signal is achieved upon voltage measurement at Hall probes when the dc field lines are co-directional with local Nernst current. Our results show the promise of large-scale multilayer graphene for thermoelectricity generation.

2026-09-05T05:47:17Z 7 pages, 3 figures Valentin Semkin Denis Borisenko Yana Litun Oleg Kononenko Dmitry Mylnikov Alexey Bocharov Dmitry Svintsov http://arxiv.org/abs/2512.12490v5 2026-09-04T20:04:03Z

High-sensitivity long-wave infrared (LWIR) detection is crucial for observing weak thermal radiation. Recently, the Poisson bolometer has been proposed as a fundamentally new platform for uncooled infrared detection. In contrast to traditional analog detectors, where signal and noise are determined by continuous currents or voltages, the Poisson bolometer's signal and noise are governed by Poissonian counting statistics regardless of the light source. In this work, we demonstrate advancements in uncooled infrared detection towards cryogenic-level sensitivity through the integration of spintronic and plasmonic materials. Specifically, a spintronic Poisson bolometer is experimentally integrated with a plasmonic nanoantenna array optimized for broadband LWIR absorption to enhance the temperature increase of the sensing layer. The plasmonic absorber exhibits an absorptance exceeding 60\% across the LWIR spectrum, matching the peak of room-temperature blackbody radiation. We demonstrate that these devices are capable of achieving a noise equivalent differential temperature (NEDT) of 35 mK at a 50 Hz frame rate, demonstrating room-temperature performance comparable to the most sensitive uncooled LWIR detectors reported to date. This work opens up a pathway to removing bulky and expensive cooling requirements from high-sensitivity LWIR detection and imaging applications, such as remote sensing, high-speed imaging, and industrial monitoring.

2025-12-13T23:16:36Z Ziyi Yang Sakshi Gupta Jehan Shalabi Daien He Leif Bauer Mohamed A. Mousa Angshuman Deka Zubin Jacob http://arxiv.org/abs/2609.05686v1 2026-09-04T19:47:09Z

The characterization of excited-state structure in semiconductor quantum dot (QD) devices is an important component of tuning them for spin-qubit operation. We present Spectroscopy With Intelligent Feature Tracking (SWIFT), a framework that combines machine-learning (ML)-assisted feature identification with physics-informed geometric processing to extract energy-level splittings from pulsed-gate spectroscopy data. SWIFT isolates the relevant spectral features and exploits their characteristic geometry to reduce the two-dimensional spectroscopy analysis to a one-dimensional peak-detection problem. It further combines an ensemble-based confidence metric with sequential accumulation of rapid, low-SNR scans, allowing the inferred spectrum to be reevaluated as experimental evidence accumulates. Using Si/SiGe QD devices, we demonstrate SWIFT both offline and in real time, including automated tracking of QD excited states and lead resonances. Benchmarking on 255 manually labeled scans shows that SWIFT reduces the median splitting error to 0.05 mV from 0.11 mV for a classical baseline, with the largest improvement on lower-quality measurements. These results provide a path toward incorporating excited-state spectroscopy into autonomous QD characterization, tuning, and optimization, which will be essential in large-scale quantum dot devices.

2026-09-04T19:47:09Z A. R. Huffman Daniel Schug Merritt Losert Sanghyeok Park Daniel King Yuna Chun Giordano Scappucci M. A. Eriksson Justyna P. Zwolak http://arxiv.org/abs/2506.21236v2 2026-09-04T17:49:08Z

When a sample is exposed using electron-beam lithography, the electrons scatter deep and far in the substrate, resulting in unwanted deposition of dose at both the nano- and the microscale. This proximity effect can be mitigated by proximity effect correction provided that accurate and validated models of the point-spread function of the electron scattering are available. Most works so far considered a double-Gaussian model of the electron point-spread function, which is very inaccurate for modern electron-beam writers with high acceleration voltages. We present measurements of the process point-spread function for chemically semi-amplified resist on silicon and indium phosphide substrates using a 150 kV electron-beam lithography system. We find that the double-Gaussian model deviates from experiments by up to four orders of magnitude. We propose instead a model comprising the sum of a power-law and a Gaussian, which is in excellent agreement with simulations of the electron scattering obtained by a Monte Carlo method. We apply the power-law plus Gaussian model to quantify the electron scattering and proximity effect correction parameters across material stacks, processing, and voltages from 5 kV to 150 kV. We find that the power-law term remains remarkably constant, whereas the long-range dose contributions and the clearing dose are significantly affected by the substrate and the acceleration voltage. Combined, the results imply that reliance on the double-Gaussian approximation in proximity-effect correction has become a limiting factor for resolution in fabrication at the nanoscale.

2025-06-26T13:22:30Z Main (incl. references); 14 pages, 8 figures. Supporting (incl. in main); 4 pages, 3 figures Nikolaj B. Hougs Kristian S. Knudsen Marcus Albrechtsen Taichi Suhara Christian A. Rosiek Søren Stobbe http://arxiv.org/abs/2609.01395v2 2026-09-04T16:39:54Z

Hyperuniform materials occupy an intermediate regime between periodic order and conventional disorder, characterized by a suppression of long-wavelength density fluctuations, commonly quantified by the structure factor. This characterization, however, relies on the statistical properties of an extended configuration or supercell representation and does not directly describe the resonant response of a finite structure, as typically encountered in scattering experiments. Here, we introduce the quasi-normal-mode spectrum as a complementary framework for characterizing the wave properties of finite stealthy hyperuniform materials. We analyze the complex eigenfrequencies of both periodic and stealthy hyperuniform structures over a range of the stealthiness parameter ($χ$), and investigate how the spatial organization of scatterers is encoded in both frequency and spatial profiles of their quasi-normal modes. We find systematic changes in the quasi-normal modes spectrum as the degree of hyperuniformity is varied, revealing signatures that are not captured solely by the structure factor. In particular, the evolution of the resonant states provides a direct connection between structural correlations and the scattering response of finite systems. Our results establish quasi-normal modes as a real-space and open-system characterization of hyperuniformity and provide a unified framework for comparing discrete heterogeneous materials from the perspective of their scattering and resonant dynamics.

2026-09-01T15:21:46Z V. Romero-García M. Martí-Sabaté V. F. Dal Poggetto L. M. García-Raffi M. Lázaro http://arxiv.org/abs/2609.05273v1 2026-09-04T15:28:19Z

We analyze thermoelectric response of composite materials comprising homogeneous semiconductor hosts with randomly distributed metallic inclusions. We demonstrate that the properties of such materials are strongly affected by the percolation transition (with background conductivity). We show that in vicinity of percolation threshold, the power factor and the thermoelectric figure of merit strongly depend on both the concentration and arrangement of inclusions. Finally, we identify promising regimes for enhancing the power factor in realistic composites.

2026-09-04T15:28:19Z Oleksandr Porubaniyi Sergii Tomko Mihailo Cherkez Viktor Podolskiy Radion Cherkez http://arxiv.org/abs/2609.05170v1 2026-09-04T14:11:49Z

The photocurrent of an organic solar cell is routinely plotted against an effective voltage and used to extract an exciton dissociation probability, and through it a free-charge generation efficiency. The photocurrent measures neither. Using a drift-diffusion model in which free-charge generation is field independent and losses occur only by bimolecular recombination, we show that the apparent dissociation probability returned by this procedure lies well below unity even for complete dissociation. Across wide variations of carrier mobility and recombination strength it is a single-valued function of the fill factor and coincides with the short-circuit charge collection efficiency, reporting neither the generation yield nor anything about collection beyond what the fill factor already shows. Even for ideal transport the normalised photocurrent saturates below unity at an intensity-independent first-order limit set by recombination of photogenerated carriers with injected equilibrium charge. Applied to four organic solar cells whose generation efficiencies are known independently, the apparent dissociation probabilities track the short-circuit collection efficiency rather than the generation yield. We therefore suggest this construction not be used, particularly in the high-efficiency non-fullerene acceptor systems that are now state of the art.

2026-09-04T14:11:49Z Ardalan Armin Austin M. Kay Drew B. Riley Oskar J. Sandberg Paul Meredith http://arxiv.org/abs/2609.04977v1 2026-09-04T10:29:48Z

Ion intercalation enables reversible control of charge, structure and function in layered solids. Yet layered materials contain nanosheets with different thicknesses and stacking, whose intercalation pathways are averaged out in ensemble measurements. This becomes critical under Angstrom-scale confinement, where ion transport couples to solvent reorganization and host deformation, leaving the origins of kinetics, reversibility and activation unresolved. Here we combine operando interferometric scattering and interference reflection microscopy to resolve proton-driven dynamics in individual single- and multilayer Ti3C2Tx MXene flakes and show that even a few stacked layers introduce a significant kinetic barrier. Cycling then separates nanosheets into three persistent behaviors: reversible monolayers, restacked multilayers with incomplete recovery and delayed deintercalation, and coherently stacked multilayers that self-stabilize through reversible folding. Operando synchrotron X-ray diffraction shows this memory at electrode scale, where the interlayer structure converges towards a reproducible state. Our findings reveal cycling-induced structural memory that governs subsequent intercalation in layered MXenes.

2026-09-04T10:29:48Z 36 pages, 5 figures Franz Groebmeyer Mohsen Beladi Christoph G. Gruber Ruocun Wang Pol Salles Nhu Quynh Nguyen Jakub Drnec Yury Gogotsi Emiliano Cortes http://arxiv.org/abs/2609.02530v2 2026-09-04T09:56:32Z

Conventional fabrication of suspended nanomechanical resonators typically relies on wet-chemical process steps and critical point drying, which can compromise sample yield and cleanliness. Here, we present an all-dry fabrication process for strongly stressed 3C-SiC nanomechanical string resonators that entirely avoids wet-chemical etching and cleaning. Using a negative-tone electron-beam resist as an etch mask and a three-step reactive-ion etching process for both structuring and release, we achieve high fabrication yield, clean suspended structures, and extreme aspect ratios of 8.500. We perform full mechanical characterization of the resulting doubly-clamped nanostring resonators, and establish a benchmark intrinsic quality factor for dissipation-diluted 3C-SiC of Qintr = 4.200.

2026-09-02T12:40:37Z Felix David Philipp Bredol Yannick S. Klaß Eva M. Weig http://arxiv.org/abs/2609.04949v1 2026-09-04T09:55:13Z

Detecting weak transient signals in noise is a persistent challenge in sensing, communication, and electrophysiology. Here, we demonstrate a physical weak-signal detector based on a semiconductor negative differential resistance (NDR) device operated near a Hopf bifurcation. A coherent input that persists over the response time of the dynamical system can drive a transition between quiescent and oscillatory states, whereas faster stochastic fluctuations are largely suppressed. This nonlinear transformation converts a weak analog threshold crossing into all-or-none voltage spikes and therefore provides asynchronous signal detection without a reference clock. Using a modulated photovoltaic signal, we detect a weak frequency component of 100 Hz as a demonstration, at an input signal-to-noise amplitude ratio as low as 1/500, and reliably recover it in the output spectrum. We then apply the same principle to neuronal multisite extracellular recordings. After standard band-pass filtering, the raw microelectrode signal is transformed by the NDR dynamics, enhancing the distinction between neuronal spikes and background fluctuations. The resulting detected spike times agree closely with those obtained using a traditional spike-detection pipeline. These results establish bifurcation-engineered NDR dynamics as a compact hardware approach to noise-resilient signal discrimination and event-based analog-to-digital conversion that will be useful for neuroprosthetic devices.

2026-09-04T09:55:13Z Jitendra Kumar Roberto Fenollosa Gonzalo Rivera-Sierra So-Yeon Kim Adam Armada-Moreira Juan Bisquert Michele Giugliano http://arxiv.org/abs/2609.04907v1 2026-09-04T09:09:42Z

Accurate temperature readings of transient events at the nanometer scale are challenging due to the low sensitivity of available sensors. Nanodiamonds containing nitrogen-vacancy (NV) centers have been used for nanoscale thermometry in complex environments, including inside living cells. However, their performance has been limited by short coherence times and low photon counts. In this work, we use isotopically-purified dual-NV nanodiamonds and a bespoke quantum sensing chip to showcase an order of magnitude improvement in temperature measurement sensitivity compared with previous reports. We demonstrate robust temperature measurements with an error of 682 $μ$K, experimental sensitivities below 50 mK/$\surd \text{Hz}$ and a shot-noise limited sensitivity of 9.6 mK/$\surd \text{Hz}$. To confirm the utility of these high-performance nanothermometers, we quantify the temperature change induced by the thermometry measurement itself, specifically the optical excitation laser used to probe the NV spin state. In addition, we observe directly at the nanometre scale the transient heating caused by the exothermic mixing of dimethyl sulfoxide in water. Sub-millikelvin resolution and millikelvin sensitivity thermometry unlock the possibility of monitoring minute thermal fluctuations in living systems and assessing catalyst performance at the nanometre scale.

2026-09-04T09:09:42Z 8 pages, 3 figures Jack W. Hart Soham Pal Julien R. E. Roth Katie Ninham Abbie H. Aleksandrova Xander Peetroons Soumen Mandal Oliver A. Williams Gavin W. Morley Mete Atature Helena S. Knowles http://arxiv.org/abs/2609.04818v1 2026-09-04T07:16:29Z

The spatial resolution of optical correlation-domain reflectometry (OCDR) has conventionally been described by an expression that is independent of the modulation frequency $f_m$, source linewidth $δν$, and receiver resolution bandwidth (RBW). However, our previous measurements showed that the spatial resolution $Δz$ improves with increasing $f_m$. Here, we develop a theoretical model for OCDR with a frequency shifter by evaluating the electrical power detected by an electrical spectrum analyzer and explicitly including $δν$ and the RBW $B$. The model predicts two regimes. At low $f_m$, $Δz$ decreases approximately in proportion to $1/f_m$, with the proportionality determined by the combined source and receiver spectral response. At high $f_m$, $Δz$ approaches a constant value determined by the modulation amplitude $Δf$ and independent of the source linewidth and RBW filter. Measurements at RBW = 1 MHz reproduced the transition between these regimes over correlation orders up to 2048. At RBW = 10 MHz, a Voigt representation of the spectral response overestimated $Δz$, whereas direct use of the measured unmodulated beat spectrum reduced the discrepancy to approximately 10 to 20%. These results provide a quantitative description of the modulation-frequency dependence of OCDR spatial resolution and clarify its trade-off with measurement range.

2026-09-04T07:16:29Z 18 pages, 5 figures, 3 tables Keisuke Motoda Takaki Kiyozumi Yosuke Mizuno http://arxiv.org/abs/2609.04734v1 2026-09-04T05:03:53Z

Non-thermal Plasma (NTP) technology, including the Dielectric Barrier Discharge (DBD) reactor, has emerged as an effective advanced oxidation process (AOP) for treating persistent organic pollutants in industrial wastewater. Based on this objective, a dual-liquid dielectric-barrier-discharge plasma reactor was built and used to degrade a ternary anionic dye mixture comprising Reactive Red 120, Congo Red, and Methyl Orange in its post-discharge configuration. The adjustable length of the outer liquid electrode (grounded) provides flexibility in controlling the discharge length and cooling, thereby achieving higher degradation efficiency and greater reactor stability. The conducting-liquid high-voltage electrode (a dielectric tube filled with a conductive solution) helps mitigate metal corrosion and oxidation caused by reactive species in the discharge zone. A detailed study of the degradation of ternary anionic dye mixtures (simulated dye wastewater samples) in the presence of activated carbon (AC) was performed to explore the potential applications of post-discharge treatment. The activated carbon (granules) enhances the degradation rate of ternary anionic dye mixtures in basic solutions rather than in acidic or neutral solutions. A comparative study of the degradation reaction kinetics of the ternary anionic dye mixtures in acidic and basic solutions was conducted after analyzing UV-Vis absorption spectra. The role of other parameters, such as solution pH, the mass and size of AC particles, dye concentrations, and AC reuse, was investigated in relation to degradation efficiency. The degradation mechanism was elucidated by the formation of strong oxidizer (hydroxyl radicals) on the surface of activated carbon during post-discharge treatment. However, in acidic or neutral anionic dye solutions, the degradation mechanism was dominated by ozone.

2026-09-04T05:03:53Z Krishna V S Surya Mangilal Choudhary http://arxiv.org/abs/2601.10118v3 2026-09-04T03:58:34Z

Broadband optical response governs light-matter interactions across photonics, plasmonics, thermal radiation, and quantum fluctuation electrodynamics, yet determining a continuous dielectric function over many decades in frequency typically requires combining multiple spectroscopies, extrapolations, and material models. Here we show that quantum-fluctuation forces provide a route to broadband optical characterization. Casimir interactions depend on the dielectric response of materials across the electromagnetic spectrum, but this information is encoded through Lifshitz theory in a spectrally weighted and nontrivial way. By training physics-constrained supervised learning models on synthetic dielectric spectra and their corresponding Casimir force curves, we invert this relationship and constrain the complex permittivity of materials over more than seven orders of magnitude in frequency and provide an estimate of their values from force-distance data. The reconstruction reveals a direct separation-frequency correspondence: large separations constrain the free-carrier response, whereas shorter separations encode higher-frequency resonant structure. Applying the method to measured force gradients identifies the current experimental limits imposed by measurement noise, restricted separation range, and model complexity. These results establish fluctuation-induced forces as a spectrally weighted route to broadband optical characterization and define the experimental and physical limits that govern what spectral information is accessible from near-field quantum electromagnetic measurements.

2026-01-15T06:56:36Z Revised version. 8 pages, 5 figures Calum F. Shelden Jeremy N. Munday http://arxiv.org/abs/2609.04655v1 2026-09-04T02:37:31Z

We report on the utilization of a low-damage e-beam NiO$_x$ deposition process to realize field-plated heterojunction diodes (FP-HJDs) on (010) $β$-Ga$_2$O$_3$ films with high critical breakdown field strengths beyond 4 MV/cm and power figure of merits (PFOM) of >1 GW/cm$^2$. Diodes were fabricated on a 2.67 $\times$ 10$^{16}$ cm$^{-3}$ intentionally doped 6.2 $μ$m thick epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) on a conductive Sn-doped $β$-Ga$_2$O$_3$ (010) substrate using TMGa, O$_2$, Ar carrier gas, and SiH$_4$ as the silicon dopant source. The mesa etched FP-HJD devices utilized a thin 7 nm e-beam NiO$_x$ interlayer before the sputtered NiO$_x$ layers to eliminate the effects of sputter-induced ion damage on the (010) epilayers. Current-Voltage measurements resulted in a forward current density of 700 A/cm$^2$ at 4 V, HJD ideality factor of 1.29, a V$_{bi}$ of 2 V, rectification ratio of 10$^{11}$, and a differential specific on resistance (R$_{on,sp}$) value of 2.36 m$Ω$ $\times$ cm$^2$. Breakdown of the (010) FP-HJDs was 1.64 kV, leading to a parallel plane electric field at breakdown (E$_{||,max}$) of 4.02 MV/cm and a PFOM of 1.14 GW/cm$^2$, which is a state-of-the-art result for diodes on MOCVD-grown (010) drift layers.

2026-09-04T02:37:31Z 19 pages, 7 figures Carl Peterson Yizheng Liu Chinmoy Nath Saha Rachel Kahler Akhila Mattapalli Sriram Krishnamoorthy