https://arxiv.org/api/GjqG7GU0Rpg91rHhhX0T5Otuibw 2026-11-12T03:43:28Z 24654 15 15 http://arxiv.org/abs/2611.12350v1 2026-11-09T13:03:29Z

The squeeze film between an electrostatically actuated microbeam can both induce damping and add stiffness to the structure. In addition, the dynamics of the film can interact with the nonlinear response of the microbeam. This paper extends a reduced-order model built on the complex modes of the coupled fluid-structure problem to the computation of periodic responses and their stability for clamped-clamped microbeams. Periodic orbits are continued in the frequency domain, and their stability is determined from their Floquet multipliers. The robustness of the response is assessed through basins of attraction, integrity measures, and dynamic pull-in maps in the plane of the excitation parameters. The model is validated against the measured and computed frequency response of a microswitch. Closed-form expressions are derived for the fluid relaxation modes, together with a correction for strongly coupled films, and define a parameter that characterizes the regime of the film. The approach is applied to different microbeams including cases where fluid modes relax on the timescale of the oscillation. For all simulated devices, a single fluid mode is necessary and sufficient, whereas adding coupled modes cannot replace it, whether the fluid modes respond quasi-statically or carry their own dynamics. Removing the fluid mode displaces both bifurcations that bound the pull-in band, changes the size of the basins of attraction and the position of the attractor within them, misses an abrupt erosion of the safe basin under increasing excitation, and shifts the whole region of dynamic pull-in in the excitation plane. The reduced model, with three real unknowns, makes these global analyses affordable for a fully coupled fluid-structure system.

2026-11-09T13:03:29Z Fehmi Najar http://arxiv.org/abs/2611.12115v1 2026-11-09T09:29:21Z

Mobile ion migration strongly influences the electrical response and current-voltage hysteresis of perovskite solar cells. However, quantitative determination of ionic transport parameters typically requires transient measurements, extensive numerical simulations, and/or fitting procedures involving multiple uncertain parameters. Here, we present an analytical model that establishes a direct relationship between capacitance-frequency (C-f) characteristics and ionic transport properties in perovskite solar cells, while accounting for interlayer effects. The model describes the transition from the ion-screened depletion capacitance at low frequencies to the geometric capacitance at high frequencies and demonstrates that the characteristic transition frequency provides a direct measure of the dielectric relaxation time for ions. Furthermore, the model establishes a quantitative connection between C-f characteristics and scan-rate-dependent current-voltage hysteresis, enabling prediction of the scan-rate window in which maximum hysteresis occurs. Drift-diffusion simulations show excellent agreement with the analytical predictions over wide ranges of ion density, ion mobility, transport-layer mobility and doping concentration. Experimental measurements confirm the predicted correlation between capacitance and hysteresis. By providing a direct, physically transparent, and computationally efficient route for extracting ionic transport parameters from routine impedance measurements, this work offers a practical tool for quantifying ion migration and understanding dynamic phenomena in perovskite solar cells.

2026-11-09T09:29:21Z Manjeet Kumar Changzeng Ding Mathias Nyman Yongqi Sun Chang-Qi Ma Ronald Österbacka Oskar J. Sandberg http://arxiv.org/abs/2610.32112v3 2026-11-09T08:54:48Z

The classical theory of p-n junctions derives the current-voltage characteristic from minority-carrier diffusion alone: majority carriers are treated as an inert background, the quasi-neutral base as field-free, and the junction voltage as equal to the applied bias. These premises fail together under high bias and high-level injection, where the observed current roll-off is reproduced only by appending an empirical series resistance outside the junction physics. Here we develop a self-consistent two-carrier drift-diffusion framework that introduces no assumption beyond the classical ones. Excess majority carriers are shown to be electrostatically forced transport participants: the ambipolar diffusion equation, closed by exact two-sided boundary conditions, yields a unified excess-carrier profile. The resulting base field separates into an ohmic and a Dember component, and all four current components follow in closed form, their sum being position independent. At device level the framework closes into an extended diode equation that contains the Shockley equation as its low-injection, long-base limit and reproduces the n=2 roll-off intrinsically. The junction voltage emerges as a self-limiting drop confined to the space-charge region and separated from the applied bias by exact base drops. Two device-level corrections are quantified: at high current, 75-90% of the dissipation migrates from the junction into the quasi-neutral base, and field-assisted acceleration shortens the base transit time by up to a factor of six. Three parameter-free predictions follow: a universal ideality-factor crossover that passes through 3/2 when the boundary excess equals the doping, a high-injection onset voltage that scales as 119 mV per decade of doping, and a geometry factor that survives into high injection.

2026-10-23T03:25:50Z Jianhong Yang Tinglan Li Gonghao Sun http://arxiv.org/abs/2610.32090v2 2026-11-09T08:48:52Z

For more than seven decades, the p-n junction current-voltage characteristic has been derived by treating majority carriers as an inert background and conflating the junction voltage with the applied bias. Here we show that the base electric field, generated by the coupling of excess majority and minority carriers, fundamentally alters the internal potential distribution. This self-consistent framework yields a closed-form extended diode equation that reproduces the high-injection roll-off without invoking an external series resistance, thereby eliminating an empirical patch that has persisted in the classical theory.

2026-10-23T02:51:18Z Jianhong Yang Gonghao Sun Tinglan Li http://arxiv.org/abs/2611.12036v1 2026-11-09T08:15:13Z

Textile spoof surface plasmon polariton (SSPP) waveguides offer guided on-body links, but their body-facing ground conductors obstruct coupling from on-skin wireless nodes. This letter presents a split-ring coupling interface using local ground recesses at the textile terminations, without patterned garment-side launchers. The capacitively loaded rings are supported by polydimethylsiloxane carriers with a thickness of 2~mm. An image-current model and full-wave simulations examine the effect of backing-ground spacing and determine the recess geometry. For a 450~mm textile waveguide on a water-filled body phantom, the measured $S_{21}$ at 2.45 GHz was $-$18.8~dB, versus $-$60.9~dB without the textile. A 625-position scan showed a maximum 5.1 dB reduction relative to the nominal position within the measured joint $\pm$5~mm placement region. A separate two-node IEEE~802.11n test demonstrated a 65~Mb/s physical-layer (PHY) rate with zero packet errors among 300 frames at $-$20~dBm transmit power through the coupler link. These results establish high-rate, placement-tolerant on-skin Wi-Fi communication through an SSPP waveguide textile.

2026-11-09T08:15:13Z 4 pages, 6 figures Akihito Noda Ryo Takahashi http://arxiv.org/abs/2611.12010v1 2026-11-09T07:49:48Z

Large materials design spaces often contain rare high-performing configurations that are difficult to identify through trial-and-error exploration or purely representative machine-learning (ML) sampling. In this work, we present FruBO, a flexible Bayesian Optimization framework for accelerating the discovery of optimal configurations in computationally demanding materials design problems. As a case study, we investigate multilayer Moiré patterns generated by the superposition of six rotated hexagonal lattices, where the objective is to identify the rotational conformation that maximizes pore-size uniformity, quantified using the Jain fairness index. The resulting benchmark contains 600,000 unique configurations and exhibits a highly skewed objective distribution, making the global optimum difficult to locate by random sampling. We compare random exploration, Gaussian Process-based Bayesian Optimization, and Bayesian Optimization using a lightweight CatBoost surrogate with committee-based uncertainty estimation. Random sampling identifies the global optimum only after 533,012 evaluations, requiring approximately 31 hours, while Gaussian Process-based BO becomes impractical due to GPU memory exhaustion after 290 acquired samples. In contrast, FruBO with CatBoost identifies the global optimum after 1,470 acquired samples and approximately 1.15 hours. These results demonstrate that scalable surrogate models can substantially improve the feasibility and efficiency of BO in large nanomaterials design spaces.

2026-11-09T07:49:48Z Panagiotis Krokidas Christos Lazaridis Vassilis Sioros Efi-Maria Papia Vassilios Constantoudis George Giannakopoulos http://arxiv.org/abs/2609.07082v2 2026-11-09T01:56:45Z

Spontaneous parametric down-conversion (SPDC) in ultrathin optical resonant metasurfaces offers a promising platform for integrated quantum light sources. However, conventional resonances suffer from steep momentum dispersion, limiting photon-pair generation to narrow excitation and emission angles. Here, we demonstrate a high-$Q$ flatband resonant 3R-MoS$_{2}$ metasurface for high-efficiency, broad-angle SPDC photon-pair generation. By combining Brillouin zone folding with in-plane symmetry breaking, we engineer a high-$Q$ flatband resonance in the near-infrared regime, maintaining a robust $Q$-factor across a wide range of incident angles. Exploiting the strong local electric field enhancement of resonance and the large second-order susceptibility of 3R-MoS$_{2}$, the metasurface boosts the degenerate SPDC pair-generation rate with orders of magnitude enhancement over an unpatterned film of identical thickness. Crucially, the near-zero band dispersion extends the effective emission angle to $\pm 5^{\circ}$ with negligible spectral drift $\sim 0.1$ nm and high directional tolerance. Under pulsed excitation with a finite spectral bandwidth, the metasurface maintains a substantial bandwidth-averaged photon-pair yield, while demonstrating strong spectral locking of the resonant emission channel against pump wavelength detuning despite the expected trade-off in generation efficiency. This work establishes a versatile strategy for momentum-independent quantum light sources, opening new avenues for scan-free quantum ghost imaging and quantum information processing.

2026-09-07T06:12:58Z Tingting Liu Huifu Qiu Xintong Shi Jumin Qiu Shuyuan Xiao http://arxiv.org/abs/2611.11563v1 2026-11-08T19:08:49Z

Hydrologic models, including deep learning systems now deployed for operational flood forecasting, are evaluated primarily by how closely their simulated hydrographs match observed streamflow. However, high hydrograph skill does not guarantee physical consistency: in a synthetic calibration experiment, a conceptual model that loses 15% of its water input to an unreported sink still reaches a Nash-Sutcliffe efficiency of 0.93, and no shared benchmark tests whether models obey fundamental conservation laws. Here we introduce HydroTuring (v0.1.0), a black-box benchmark of 37 physics probes that test mass (24 probes), energy (7) and momentum (6) conservation in hydrologic models. Each probe runs a controlled experiment on forcing generated at run time from a recorded seed and applies binary pass or fail criteria validated against 18 physically exact and 59 deliberately broken reference models. Across 32 evaluated models (3 exact references, 7 AI-based models and 22 process-based models), only the 3 exact references pass every probe among the 28 models scored on 5 or more probes. Process-based and AI-based models pass similar shares of their scored probes (76% and 74%), and a pre-trained flood-forecasting LSTM fails 6 of the 11 runoff-only probes it can be scored on. Furthermore, 49% of all 1,184 model-probe pairs remain unscored because models omit the required state or flux variables, while the scored failures occur in perturbation responses and state bounds rather than long-term water-budget closure. HydroTuring provides a reproducible smoke test for model development, peer review and operational deployment under an open community protocol.

2026-11-08T19:08:49Z Zhi Li Changming Li Siavash Shams Han Wang Qingyi Yang Yuanhang Liu Taiqi Lian Xin Lan Shunan Zhou Binlan Zhang Siddik Barbhuiya Songkun Yan Bing Li Jinlong Hu Yaji Wang Zhenjiang Wu Mofan Zhang Kaihao Long Jingzhi Chen Yuan-Heng Wang http://arxiv.org/abs/2611.11524v1 2026-11-08T17:58:23Z

In this work, we fabricate and characterize ultra-wide bandgap Al0.6Ga0.4N channel HEMTs with Pt/Au gate under a wide temperature range of 20 K to 650 K. The devices retained robust modulation capability throughout the measurement, with excellent on/off ratio of 9.7 * 107 and 6.4 * 107 under 20 K and 650 K. The DC output IV measurement was performed, with Id,max of a device with Lsd = 9 μm measured to be 240 mA/mm and 120 mA/mm under 20 K and 650 K. In addition, low drain and leakage were observed in multiple devices, and the device robustness was evaluated under room temperature after the extreme temperature measurement with minimal degradation observed in Id,max and Rsheet. Moreover, transfer I-V characteristics of the Al0.6Ga0.4N channel HEMTs have also been studied, where a relatively small Vth shift was observed. TLM measurement and transconductance analysis both indicate the presence of weak temperature dependent scattering mechanisms in the device channel. The subthreshold swing (SS) was calculated and observed to increase parallelly to SSideal under investigated temperature, indicates a robust gate structure. Finally, the on/off ratio and Ig of the 9 μm Lsd device were benchmarked and compared favorably against other reported results. While the results offer insight into the extreme temperature performance of AlGaN channel HEMT with Al composition higher than 50%, it also establishes AlGaN channel HEMT as a promising candidate for extreme temperature electronic applications.

2026-11-08T17:58:23Z 6 pages, 7 figures Shuwen Xie Jacklyn Zhu Swarnav Mukhopadhyay Yi-Chen Liu Shubhra Pasayat Savannah Eisner Chirag Gupta http://arxiv.org/abs/2610.17464v2 2026-11-08T03:47:41Z

A Dirac mass is characterized not only by its magnitude but also by its sign, which influences the Berry curvature, Hall response, and the propagation direction of chiral boundary modes. However, local spectroscopy of magnetic topological surfaces has so far accessed only the gap magnitude $|M|$. Here we show how the topological sign of $M$ can be determined locally. We first establish the sign information that spin-resolved tunneling can access and the reference required to obtain an absolute Hall sign. Although spin--orbital entanglement generally obscures the relation between measured spin and Dirac pseudospin, crystalline rotation symmetry alleviates this ambiguity at the band edge. On a $C_3$ axis, an axial tip couples to a fully spin-polarized state whose tunneling asymmetry directly reveals the sign of the occupied-band Berry curvature, independent of orbital composition. We further show that the zeroth Landau level provides an independent mass-sign measurement with an unpolarized tip, while opposite domains and their chiral domain-wall modes provide self-consistency checks. These results pave the way for imaging the locations where the topological character changes within a material, rather than merely identifying where a spectral gap appears.

2026-10-12T22:26:25Z Payman Kazemikhah Ruolun Zhang Byunghoon Kim Xiangyu Luo Zachary Ducorsky Yu-Peng Zhu Md. Shafayat Hossain M. Zahid Hasan http://arxiv.org/abs/2611.11042v1 2026-11-08T00:45:24Z

In this work, an ultra-wide bandgap (UWBG) high-electron-mobility transistor (HEMT) was fabricated using an $\mathrm{Al}_{0.76}\mathrm{Ga}_{0.24}\mathrm{N}$ barrier and an $\mathrm{Al}_{0.61}\mathrm{Ga}_{0.39}\mathrm{N}$ channel with thick $\mathrm{SiO}_2$ passivation. The device demonstrated low current collapse at $40\text{ V}$ drain bias. At $10\text{ GHz}$, the device exhibited an output power of $3.07\text{ W/mm}$ with an associated power-added efficiency (PAE) of $24.4\%$. A peak PAE of $33.9\%$ was achieved at an associated output power of $2.14\text{ W/mm}$. This excellent large-signal performance highlights the strong potential of UWBG $\mathrm{AlGaN}$ channel devices for X-band applications.

2026-11-08T00:45:24Z Meherab Hossain Ruixin Bai Swarnav Mukhopadhyay Brahmani Challa Kuan Chang Pan Ryan Gilbert Guangying Wang Surjava Sanyal Chuang Ye Md Tahmidul Alam Khush Gohel Ahmad E. Islam Andrew J. Green Shubhra S. Pasayat Chirag Gupta http://arxiv.org/abs/2611.11037v1 2026-11-08T00:39:51Z

In this work, ultra-wide bandgap (UWBG) $\mathrm{Al_{0.60}Ga_{0.40}N}$ channel high-electron-mobility transistors (HEMTs) with an $\mathrm{Al_{0.81}Ga_{0.19}N}$ barrier and an $\mathrm{Al_{0.86}Ga_{0.14}N}$ back barrier were fabricated. The devices featured a recessed T-gate structure and $\mathrm{SiO_2}$ passivation. Scaled devices achieved a cutoff frequency ($f_{\mathrm{T}}$) of 35 GHz, a maximum oscillation frequency ($f_{\mathrm{max}}$) of 82 GHz, and an average breakdown field $> 3 \mathrm{MV/cm}$, while maintaining a reasonable current collapse of $\sim 20\%$ under a 40 V drain bias in pinch-off condition. Devices with larger dimensions demonstrated a high off-state breakdown voltage of 883 V and an $f_{\mathrm{T}}$ of 24 GHz, yielding a high Johnson's figure of merit ($\mathrm{JFOM}$) of 21.19 $\mathrm{THz \cdot V}$. Across all device geometries, a high $I_{\mathrm{ON}}/I_{\mathrm{OFF}}$ ratio exceeding $10^6$ was observed with drain and gate leakage currents strictly below $10^{-6} \mathrm{A/mm}$. This work demonstrates an optimized design for $\mathrm{AlGaN}$ channel RF HEMTs and their excellent potential for X- to Ka-band applications.

2026-11-08T00:39:51Z Meherab Hossain Ruixin Bai Swarnav Mukhopadhyay Brahmani Challa Guangying Wang Surjava Sanyal Md Tahmidul Alam Khush Gohel Rafael A. Choudhury Shubhra S. Pasayat Chirag Gupta http://arxiv.org/abs/2602.17332v3 2026-11-07T21:28:39Z

We present g4chargeit, a kinetic Monte Carlo framework built on Geant4 for self-consistent simulation of time-dependent electrostatic charging in dielectric materials. The model explicitly incorporates stochastic particle transport and scattering processes using validated Geant4 cross-sections, while self-consistently evolving the electric potential and field. As a representative application, we simulate the charging of regolith grains under average dayside conditions on the Moon. The surface of the Moon, in addition to other airless planetary bodies, are regularly exposed to solar ultraviolet photons and solar-wind plasma, creating a radiation environment in which electrostatic interactions among regolith grains become significant. Until now, simulations of regolith charging have often relied on analytical approximations that oversimplify grain geometry and interaction mechanisms. Our Geant4-based simulations reveal charge accumulation within intergrain micro-cavities, leading to repulsive electrostatic forces consistent with experimental observations. The framework establishes a multiscale approach that links microscopic scattering events to the continuity equation of surface charge density and to the formation of macroscopic surface charge patches in complex grain geometries. Although demonstrated here for planetary regolith, the method is general and applicable to a broad range of dielectric charging problems. The code is openly available at https://github.com/kgandhi63/g4chargeit.git.

2026-02-19T12:58:00Z J. Comput. Phys. 569 (2027) 115479 Kush P. Gandhi Advik D. Vira William M. Farrell Nikolai Simonov Alvaro Romero-Calvo Thomas M. Orlando Phillip N. First Zhigang Jiang 10.1016/j.jcp.2026.115479 http://arxiv.org/abs/2611.10937v1 2026-11-07T19:59:48Z

Floppy frameworks carry flat bands of zero-frequency mechanisms with no finite-frequency resonance, and couplings that lift them usually spread them. We show that an on-site tensor lifts a mechanism band without first-order dispersion exactly when, projected onto the mechanisms, it acts as wavevector-independent scalars on orthogonal pieces. Three structures achieve this: local normal modes, invariant symmetry sectors, and a balance law. A mechanism moves both ends of every bond between two vertex classes equally along it, and where the inter-class bond tensors are class scalars this balance law fixes its norm shares and hence the flat value from geometry alone. For the fluorite net the band lies outside the tensor spectrum, at 14/9 of the contact stiffness to first order, and stays flat to all orders in a fixed cage. A placement inside a tiling dual that keeps the common symmetry supplies such tensors, because each contact star inherits its site symmetry. Ten catalogued dual pairs lift flat; half are eigenvalue cases a resolved count matches, and the balance law explains flat bands in random cages too. Duality makes the rigid cage common. In a printable beam-frame lattice, contacts that lock joint rotation remove first-order bending dispersion whenever bonded mechanisms are orthogonal local normals.

2026-11-07T19:59:48Z 61 pages, 4 figures in the main text; Supplementary Information included. Code and data: https://doi.org/10.5281/zenodo.24043086 Joohan Nam http://arxiv.org/abs/2602.21847v3 2026-11-07T19:42:31Z

Here we analyze ways to achieve deep subthreshold squeezing or cooling of fluctuations in a parametric resonator enhanced by a lock-in amplifier feedback loop. The main advance and novelty of this paper is that we analyzed the full impact of this feedback on the response of the parametric resonator to an ac drive or to additive noise. Due to this feedback, the dynamics of the parametric resonator becomes more complex and, in addition to a saddle-node bifurcation (SNB), a Hopf bifurcation (HB) at the instability threshold can also occur. We calculate the phase-dependent amplification gain in the response of the resonator to an added ac signal with three independent techniques: approximately using the averaging method (AM) or the harmonic balance method (HBM), and more precisely using Floquet theory (FT) and Green's functions. The HB was predicted by the AM, FT, and a modified version of the HBM that takes into account quasi-periodicity. In our analysis of fluctuations, we were able to calculate the noise spectral density and the squeezing or cooling of fluctuations using Fourier techniques and FT. Deamplification and cooling occur near the HB, whereas deep squeezing and heating occur near a SNB. Furthermore, we show that there is an optimal amount of parametric pumping and feedback to reach the strongest cooling. The theoretical framework presented here is general and could be applied to a wide range of physical implementations.

2026-02-25T12:25:58Z 33 pages, 9 figures. Small change in title. Accepted version. Published J. Phys. A: Math. Theor. 59 (2026) 385004 Adriano A. Batista Raoni S. N. Moreira A. A. Lisboa de Souza 10.1088/1751-8121/aea460