https://arxiv.org/api/GX0kiiDw6VTYMaXvlPAkigWmkaw 2026-03-30T10:30:35Z 23086 105 15 http://arxiv.org/abs/2601.09476v2 2026-03-18T17:13:57Z

This article presents a novel fabrication route for miniaturized piezoelectric actuators that relies exclusively on processes based on femtosecond (fs) laser ablation. Previous work has already demonstrated that fs-lasers are uniquely suited for the fabrication of piezoelectric actuators based on PMN-PT, which are required for multiaxial strain-tuning of quantum dots (QDs) to enable, e.g. the generation of highly entangled photon pairs. Building on these foundations, the present work advances actuator performance and capabilities by introducing a local thinning strategy. This approach allows the realization of smaller devices, which in turn enables lower operating voltages, while simultaneously offering the possibility of integrating multiple quantum light sources on a single chip. The article provides a detailed description of the full fabrication chain, entirely based on fs-laser processing steps, from substrate thinning to metal layer structuring and final device definition. A particular focus is placed on the final cutting process, where the implementation of a third-harmonic ultraviolet (UV) fs-laser wavelength significantly improves edge quality and shape definition compared to the second harmonic (SH) wavelength used in previous work. The device fabricated through the combination of local thinning and UV-based cutting promises not only to enhance the efficiency of strain transfer but also to ensure the mechanical stability required for practical applications. These results establish fs-laser-based fabrication as a versatile and scalable method for next-generation piezoelectric actuators, paving the way for advanced strain-engineering approaches in semiconductor quantum optics and integrated quantum photonics.

2026-01-14T13:34:36Z 16 pages, 11 figures Menotti Markovic Lucia Oberndorfer Tobias M. Krieger Ievgen Brytavskyi Barbara Lehner Julia Freund Vishnu Prakash Karunakaran Matthias Domke Dorian Gangloff Christian Schimpf Peter Michler Simone Luca Portalupi Michael Jetter Rinaldo Trotta Javier Martín-Sánchez Armando Rastelli Fadi Dohnal Sandra Stroj http://arxiv.org/abs/2603.17814v1 2026-03-18T15:06:22Z

Conventional polarization detection relies on external filters, which incur significant efficiency loss and polarization crosstalk, especially in the deep ultraviolet band where subwavelength nanofabrication is challenging. Here, we report that monoclinic \b{eta}-Ga2O3 exhibits intrinsic giant polarization dichroism, allowing near-ideal polarization photodetection without external optical elements and coherent polarization-division multiplexing (PDM) capability. The giant dichroism originates from the crystallographic symmetry-driven selectivity of optical transitions, which, combined with a large valence band splitting, results in vastly distinct absorption for orthogonal polarizations. A theoretical analysis of the transition selection rules in \b{eta}-Ga2O3 reveals only the E//c-polarized vb1-to-conduction band transition is activated, within the 245-258 nm spectral window. An admirable polarization ratio surpassing 500 and a polarization crosstalk ratio below 0.2% is hence achieved. The polarization-sensitive photodetector exhibits a high responsivity of 73 A/W and fast response (20 ms). Furthermore, we showcase its practical utility in PDM free-space communication, successfully decoding encoded optical signals, and demonstrate its capability for high-fidelity Stokes vector retrieval. The intrinsic anisotropy of \b{eta}-Ga2O3, dictated by its crystal symmetry, lays the groundwork for filter-free, high-fidelity polarization polarimetry. This work further paves the way for a general design principle in next-generation optoelectronics that harness polarization transition selection rules.

2026-03-18T15:06:22Z Yonghui Zhang Rui Zhu Huili Liang Guochao Zhao Shuli Wei Qing Lu Zengxia Mei http://arxiv.org/abs/2503.22279v2 2026-03-18T03:04:00Z

We observe microwave nonreciprocal one-way transparency via ultrastrongly-coupled magnetochiral polaritons (MChPs) in a metamolecule at room temperature. The experimental results using MCh metamolecules with simultaneous breaking of time-reversal and space-inversion symmetries are reproduced by numerical simulations. Based on effective polarizability tensor analyses, we verify massive synthetic motion of MChPs as an origin of the one-way transparency. This study paves a way to hybrid quantum systems and synthetic gauge fields using metamaterials.

2025-03-28T09:49:36Z 4 figures Physical Review B 113, L121406 (2026) Kentaro Mita Toshiyuki Kodama Toshihiro Nakanishi Tetsuya Ueda Kei Sawada Takahiro Chiba Satoshi Tomita 10.1103/qlg7-ygq8 http://arxiv.org/abs/2603.17140v1 2026-03-17T21:12:02Z

This work unlocks the manufacturing of nanophotonic quantum systems that exploit the unique material properties of single-crystal diamond (SCD). We achieve this by introducing a semiconductor-compatible process for the direct bonding of multiple high-quality, ultrathin diamond films onto a carrier wafer, enabling the subsequent parallel nanofabrication of optoelectronic integrated circuits. Central to this approach is a new diamond surface-preparation method that avoids boiling tri-acid mixtures while producing exceptionally clean 20 um thin single crystals. These platelets are bonded side-by-side to 100 mm silica wafers and exhibit a record shear strength of 45.1 MPa for (100)-oriented diamond, surpassing all previously reported bonding attempts. Evidence indicates that the bonding is dominated by van der Waals interactions, likely arising from mismatched protonation mechanisms between Si-OH and C-OH surface terminations, rather than from covalent-bond-driven mechanisms. Despite this non-molecular nature, the heterostructures remain stable through liquid immersions and standard nanofabrication steps. Because the method depends primarily on surface cleanliness and roughness rather than specific chemistries, it is broadly transferable across wafer materials. This capability to parallel-bond ultrathin SCD films onto large-area substrates provides a scalable route to high-performance platforms spanning nanophotonic quantum technologies, high-power electronics, MEMS, and biotechnology.

2026-03-17T21:12:02Z Dominic Lepage Amin Yaghoobi Heidi Tremblay Dominique Drouin http://arxiv.org/abs/2603.15356v2 2026-03-17T19:46:23Z

Bosonic codes offer hardware-efficient approaches to logical qubit construction and hosted the first demonstration of beyond-break even logical quantum memory. However, such accomplishments were done for idling information, and realization of fault-tolerant logical operations remains a critical bottleneck for universal quantum computation in scaled systems. Error-transparent (ET) gates offer an avenue to resolve this issue, but experimental demonstrations have been limited to phase gates. Here, we introduce a framework based on dynamic encoding subspaces that enables simple linear drives to accomplish universal gates that are error semi-transparent (EsT) to oscillator photon loss. With an EsT logical gate set of {X, H, T}, we observe a five-fold reduction in infidelity conditioned on photon loss, demonstrate extended active-manipulation lifetimes with quantum error correction, and construct a composite EsT non-Clifford operation using a sequence of eight gates from the set. Our approach is compatible with methods for detectable ancilla errors, offering an approach to error-mitigated universal control of bosonic logical qubits with the standard quantum control toolkit.

2026-03-16T14:36:31Z Saswata Roy Owen C. Wetherbee Valla Fatemi http://arxiv.org/abs/2603.17101v1 2026-03-17T19:43:55Z

The interplay between superconductivity and ferromagnetism has long been pursued as a route to unconventional Josephson effects, yet suitable material platforms remain limited. Here we report Josephson junctions based on epitaxial Al/InAs/(Ga,Fe)Sb heterostructures grown by low-temperature molecular beam epitaxy, achieving atomically abrupt superconductor/semiconductor/ferromagnetic interfaces. The devices exhibit clear proximity-induced superconductivity, including multiple Andreev reflections and gate-tunable supercurrents, confirming transparent coupling across the hybrid structure. Under perpendicular magnetic fields, the junctions reveal highly unconventional Fraunhofer interference patterns with hysteresis, flux jumps, asymmetric lobe evolution, and clear nonreciprocity, providing strong evidence of induced ferromagnetism and broken time-reversal symmetry in the superconducting channel. Gate control further modulates the critical current, highlighting the semiconducting nature of the system. Our results demonstrate that ferromagnetic semiconductor heterostructures can serve as a highly tunable platform for exploring proximity-induced superconductivity and superconducting diode effects, and for advancing device concepts at the intersection of magnetism and quantum electronics.

2026-03-17T19:43:55Z Hirotaka Hara Lukas Baker Axel Leblanc Shingen Miura Keita Ishihara Melissa Mikalsen Patrick J. Strohbeen Jacob Issokson Masaaki Tanaka Javad Shabani Le Duc Anh http://arxiv.org/abs/2603.16997v1 2026-03-17T18:00:01Z

Field emission from metals underpinned early vacuum-tube technology, and recent nanoscale engineering made field-emission devices compatible with modern silicon platforms. However, the limited tunability of electron transport in metals has restricted their applicability. Here, we show that noble metals coated with graphene exhibit clean non-monotonic $I-V$ characteristics arising from resonant tunneling through graphene's electronic states, enabled by graphene's atomic thinness and weak electronic hybridization with noble metals. Our approach combines ab-initio interface parameters with exact solutions of the Schrödinger equation for electron transmission across the interface. We analyze two experimentally relevant geometries: a vertical configuration with a flat suspended emitter and a coplanar configuration with sharp electrodes allowing for strong field enhancement and gating. These results establish a practical route to tunable electron transport in metal heterostructures, positioning them as competitive components for air-channel field-emission nanoelectronics.

2026-03-17T18:00:01Z to appear in Nano Letters: 7 pages + references and supporting materials = 18 pages in total, including 4 main figures and 5 supplementary figures Nano Lett. 26, 3760 (2026) Maxim Trushin 10.1021/acs.nanolett.5c06054 http://arxiv.org/abs/2603.16655v1 2026-03-17T15:24:18Z

A recent proposal suggested that neutron orbital angular momentum (OAM) states could be detected via spin-polarized absorption in polarized 3He, with predicted cross-section variations linked to the neutron's OAM. We experimentally tested this hypothesis using spin-polarized neutron beams with OAM =-2 to 2, generated by fork-dislocation phase-gratings, and transmitted through a polarized 3He cell. Within statistical precision, no OAM-dependent change in the absorption cross section was observed. This null result places stringent constraints on polarized 3He-based OAM detection schemes. The absence of an effect in the given regime is traced to the proposal's disregard of the spatial character of neutron OAM: unlike spin, OAM arises from the transverse phase structure of the wavefunction and couples only through spatial gradients and overlap. The transverse extent of neutron OAM modes expands rapidly, producing a doughnut-shaped intensity profile with negligible overlap with on-axis 3He nuclei, while off-axis capture samples only a locally uniform phase and reduces the interaction to the known spin dependence. These results clarify the limits of absorptive nuclear methods for probing neutron OAM and emphasize the necessity of spatially resolved interactions in any viable detection scheme.

2026-03-17T15:24:18Z D. Sarenac O. Lailey D. V. Garrad P. R. Vadnere N. Shentevski C. W. Clark D. G. Cory J. P. Cotter H. Ekinci M. G. Huber J. W. Paster Y. Tzeng D. Alba Venero D. A. Pushin http://arxiv.org/abs/2603.16589v1 2026-03-17T14:36:57Z

Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of state-of-the-art SiC UV detectors remains limited due to high reflectance losses, even with the use of anti-reflection coatings. Here, we develop a reactive ion etching process for nanostructuring SiC to eliminate the reflectance losses. The process is based on consecutive oxidation and etching cycles. Consequently, a reflectance below 0.5% is achieved from deep UV (200 nm) to close to the SiC cut-off (~360 nm). The nanostructures are effective even at large incident angles as the reflectance remains practically unchanged up to 60 degrees. Furthermore, it is confirmed that the process consumes only ~1 um of SiC and is compatible with Al2O3 masking, thereby facilitating straightforward integration into device fabrication. The developed cyclical etching process could also prove useful for SiC etching in general.

2026-03-17T14:36:57Z Joonas Isometsä Auguste Bieleviciute Xiaolong Liu Ville Vähänissi Hele Savin http://arxiv.org/abs/2603.16556v1 2026-03-17T14:18:44Z

Acoustic anechoic chambers allow free-field measurements required for the verification of effects under investigation and for the characterization of developing devices. However, the construction of an anechoic chamber is a labor-intensive process that requires a lot of resources, which is why these facilities are rather rare. An analogous statement can be made about radiowave chambers. At the same time, it is known that materials for radiowave absorption might absorb acoustic waves as well, and it can be expected that some chambers can be utilized for both electromagnetic and acoustic free-field measurements. This work examines the feasibility of the radiowave anechoic chamber of ITMO University (Saint-Petersburg, Russia) for acoustic measurements. The acoustic properties of the chamber coatings are estimated via measurements and numerical calculations. Characterization of sound pressure level, background noise level, and reverberation time is performed in accordance with the ISO 3745:2012 standard. The key conclusion is that the chamber can be considered as an acoustic anechoic chamber, but only for specific frequency ranges and distances from the source, which depend on the measurement directions.

2026-03-17T14:18:44Z Farid Bikmukhametov Ksenia Razrezova Roman Smolnitsky Yuri Shchelokov Nikolay Kanev Mariia Krasikova http://arxiv.org/abs/2603.16229v1 2026-03-17T08:09:26Z

A systematic survey and subsequent research have been made on MoTe2-based n-CdS/p-MoTe2/p+-CGS device in solar cell and photodetector field. The optimization has been established by altering the various properties of each constituent layer through numerical computation. The performance of the MoTe2 photonic device has been probed with and without CGS back surface field (BSF) layer in details. The proposed n-CdS/p-MoTe2/p+-CGS photonic device exhibits markedly improved cell efficiency, η of 32.92 % with VOC of 0.97 V, JSC of 41.21 mA/cm2, FF of 82.73% and responsivity, R of 0.74 A/W as well as detectivity, D* of 2.36x1016 Jones at a wavelength of 1000 nm. These simulation outcomes reveal the strong potential of MoTe2 absorber along with the novel and improved structure for highly-efficient solar cells and photosensors that capable of high detection capability.

2026-03-17T08:09:26Z 22 pages, 8 Figures, 2 Tables Md. Naeemur Rahman Md. Alamin Hossain Pappu Md. Islahur Rahman Ebon Abdul Kuddus Dinesh Pathak Jaker Hossain http://arxiv.org/abs/2601.10401v2 2026-03-17T07:27:42Z

We present a comparative study of three Monte Carlo simulation frameworks -SRIM, GEANT4, and PHITS- for modeling the transport, stopping, and atomic cascade of negative muons in micrometer-scale, multilayer systems relevant to Muon-Induced X-ray Emission (MIXE) experiments at the Paul Scherrer Institute (PSI). Using a lithium-ion battery as a benchmark target, simulated implantation profiles are compared with experimental data from the GIANT spectrometer. All three codes reproduce the overall muon depth distributions with good consistency, even across sharp density contrasts. SRIM provides reliable implantation estimates for compact geometries, whereas PHITS reproduces GEANT4 results with comparable accuracy and additionally generates muonic X-ray spectra. These spectra, however, exhibit a systematic energy offset in the K-line transitions of medium- and high-Z elements relative to theoretical and experimental values. Despite this bias, PHITS accurately captures relative intensities and spectral shapes, enabling element-specific line identification. The results demonstrate that SRIM and PHITS constitute practical tools for rapid estimation of muon implantation and stopping profiles, and that PHITS holds strong potential for predictive MIXE spectroscopy once its transition-energy bias is corrected.

2026-01-15T13:51:15Z Maxime Lamotte Michael W. Heiss Thomas Prokscha Alex Amato http://arxiv.org/abs/2603.15584v2 2026-03-17T04:43:35Z

Physics-informed neural networks (PINNs) and neural operators (NOs) for solving the problem of diffraction of Extreme Ultraviolet (EUV) electromagnetic waves from contemporary lithography masks are presented. A novel hybrid Waveguide Neural Operator (WGNO) is introduced, based on a waveguide method with its most computationally expensive components replaced by a neural network. To evaluate performance, the accuracy and inference time of PINNs and NOs are compared against modern numerical solvers for a series of problems with known exact solutions. The emphasis is placed on investigation of solution accuracy by considered artificial neural systems for 13.5 nm and 11.2 nm wavelengths. Numerical experiments on realistic 2D and 3D masks demonstrate that PINNs and neural operators achieve competitive accuracy and significantly reduced prediction times, with the proposed WGNO architecture reaching state-of-the-art performance. The presented neural operator has pronounced generalizing properties, meaning that for unseen problem parameters it delivers a solution accuracy close to that for parameters seen in the training dataset. These results provide a highly efficient solution for accelerating the design and optimization workflows of next-generation lithography masks.

2026-03-16T17:46:15Z arXiv admin note: substantial text overlap with arXiv:2507.04153 Vasiliy A. Es'kin Egor V. Ivanov http://arxiv.org/abs/2506.18310v2 2026-03-17T02:40:37Z

Integrated photonic convolution processors make optical neural networks (ONNs) a transformative solution for artificial intelligence applications such as machine vision. To enhance the parallelism, throughput, and energy efficiency of ONNs, wavelength multiplexing is widely applied. However, it often encounters the challenges of low compactness, limited scalability, and high weight reconstruction latency. Here, we proposed and demonstrated an integrated photonic processing unit with a parallel convolution computing speed of 1.62 trillion operations per second (TOPS) and a weight reconstruction speed exceeding 38 GHz. This processing unit simultaneously achieves, for the first time, multi-wavelength generation and weight mapping via a single programmable electro-optic (EO) frequency comb, featuring unprecedented compactness, device-footprint independent scalability, and near-unity optical power conversion efficiency (conversion efficiency from input optical power to output weighted comb lines). To demonstrate the reconfigurability and functionality of this processing unit, we implemented image edge detection and object classification based on EO combs obtained using the particle swarm algorithm and an EO comb neural network training framework, respectively. Our programmable EO comb-based processing framework establishes a new paradigm towards the development of low-latency monolithic photonic processors, promising real-time in-sensor learning for autonomous vehicles, intelligent robotics, and drones.

2025-06-23T05:54:47Z Jinze He Junzhe Qiang Yiying Dong Jingyi Wang Tian Dong Gongcheng Yue Rongjin Zhuang Mingze Lv Siyuan Yu Zhongjin Lin Xinlun Cai Yuanmu Yang Guanhao Wu Yang Li http://arxiv.org/abs/2603.15984v1 2026-03-16T22:56:56Z

BiFeO3 is a model multiferroic in which the ferroelectric polarization is coupled to ferroelastic lattice distortions, yet deterministic control of its domain structure remains limited by high switching fields and competing polarization variants. Here, we identify a mechanically assisted polarization switching pathway in epitaxial BiFeO3 thin films that fundamentally alters the switching energetics. Using just out-of-plane electric fields, polarization reversal requires voltages of approximately 4 V and stabilizes coexisting polarization states. In contrast, when mechanical pressure is applied concurrently, the coercive voltage can be significantly reduced (even to 0V), resulting in spontaneous switching. Piezoresponse force microscopy measurements reveal that applied mechanical pressure suppresses ferroelastic domain competition, indicating a decrease in the required electrical energy barrier associated with polarization rotation and domain wall motion. These results demonstrate that stress acts as an active thermodynamic control parameter, enabling access to switching pathways that are inaccessible under only an electric field. By directly coupling lattice distortions to polarization reversal, mechanically assisted switching provides a general framework for controlling coupled order parameters in multiferroic oxides, which can be directly applied in the device-level architecture, where a small mechanical pressure can help in achieving lower switching energy of ferroelectric polarization. This work advances the fundamental understanding of electromechanical coupling in complex ferroics and establishes mechanical energy as a powerful tool for probing and manipulating ferroelastic ferroelectric interactions.

2026-03-16T22:56:56Z 8 Pages, 4 figures Pushpendra Gupta Peter Meisenheimer Xinyan Li Sajid Husain Vishantak Srikrishna Ashley Cortesis Yimo Han Ramamoorthy Ramesh