https://arxiv.org/api/So3/t4UdD0k/stYrfhc0ZjAeADM 2026-11-12T03:35:29Z 24654 0 15 http://arxiv.org/abs/2611.14292v1 2026-11-10T16:30:30Z

Semiconductor nanostructures are key light-management elements because their geometry can strengthen light-matter interaction, suppress reflection, and enhance optical coupling. Yet their adoption across material platforms is constrained by lithography, multistep pattern transfer, persistent masks, and material-specific etching. Here, we introduce a lithography-free two-step strategy in which thermally evaporated self-assembled Ga nanoparticles act as self-consuming masks during Ar inductively coupled plasma reactive-ion etching. Correlated transmission electron microscopy on GaAs reveals the formation mechanism. Comparable erosion of the Ga nanoparticles and exposed substrate progressively converts Ga-capped pedestals into pure semiconductor nanocones while preserving crystalline order. Nanocone dimensions extend from tens to hundreds of nanometres, and surface coverage is tunable through Ga deposition and plasma power. The same process produces nanocones on GaP and Si and dense nanostructures on polycrystalline hybrid metal-halide perovskite without detectable PbI2 formation. During nanostructuring, the sun-weighted reflectance reaches minima of 11-15% on the monocrystalline substrates, whereas the perovskite achieves 0.5% after complete mask consumption. The approach therefore combines a self-assembled mask, its consumption, and pattern transfer in a single physical etching step, providing a simple route to light-coupling surfaces for III-V, Si, and perovskite optoelectronics.

2026-11-10T16:30:30Z S. Catalán-Gomez M. Ibáñez P. Guo V. Braza B. Vázquez R. Sun F. Li P. Ibáñez Y. K. Ryu M. Vila J. Bartolomé D. F. Reyes J. Martínez D. González H. Wang J. M. Ulloa A. Hierro http://arxiv.org/abs/2603.02869v2 2026-11-10T16:27:28Z

This paper presents a novel class of string tyre models with FrBD friction dynamics. By modelling the distributed carcass and tread deformations with string-like equations, the resulting formulation leads to a system of semilinear parabolic partial differential equations (PDEs) that describe the evolution of the tyre states without explicitly distinguishing between stick and slip regimes. Rigorous stability and passivity analyses are also conducted using a Lyapunov-based approach, establishing boundedness of the distributed states and energy dissipation during rolling contact. The proposed Lyapunov function admits a clear physical interpretation as the total elastic energy stored in the tyre, enabling a direct link between mechanical energy storage and frictional dissipation due to slip losses. The steady-state and transient behaviours of the model are investigated both numerically and experimentally, revealing that the new formulation can satisfactorily reproduce nonlinear relaxation phenomena excited by step slip inputs. The resulting model provides a physically interpretable, mathematically well-posed, and computationally efficient basis for advanced vehicle dynamics simulations and control-oriented applications.

2026-03-03T11:22:17Z 25 pages, 10 figures. Under review at Vehicle Systems Dynamics (2nd round) Luigi Romano http://arxiv.org/abs/2611.13800v1 2026-11-10T09:34:17Z

Transferring atomic quantum sensors from laboratory-scale physics packages to compact, alignment-free sensor heads suitable for field and space deployment requires a structural platform that combines mechanical, thermal, and optical functionality within a single, manufacturable component. We present such a platform based on additively manufactured technical ceramics: lithography-based ceramic manufacturing is used to fabricate monolithic micro-optical benches with application-specific mounting geometries, while high-precision active alignment and adhesive bonding realize long-term stable optical assemblies through micro-integration. As a first system-level demonstrator, we present a micro-integrated optical frequency reference based on Doppler-free spectroscopy of the rubidium D2 line, integrated within a 6 mL Al2O3 module. A laser stabilized to the reference reaches a fractional frequency instability of $3\times10^{-12}$ at 1 s. We extend the platform to a compact optically pumped magnetometer, exploiting the magnetic cleanliness and tailored thermal properties of high-purity ceramics for a 7 mL sensor head with picotesla sensitivity aimed at space-borne biomagnetometry, and to a micro-integrated optical dipole trap with active MEMS-mirror beam steering for cold-atom manipulation. Together, these demonstrators show that ceramic additive manufacturing and optical micro-integration form a versatile, robust platform for compact atomic sensor systems in field and space applications.

2026-11-10T09:34:17Z 10 pages, 4 figures. Presented at the International Conference on Space Optics (ICSO) 2026; to be published in the ICSO 2026 Proceedings, SPIE Digital Library Marc Christ Sascha Neinert Conrad Zimmermann Klaus Döringshoff Markus Krutzik http://arxiv.org/abs/2606.01272v2 2026-11-10T08:42:53Z

Mechanical phononic crystals attenuate vibration transmission in a wide frequency range called the bandgap. Chiral phononic crystals have demonstrated their ability to achieve low-frequency bandgaps while maintaining a high static stiffness. However, their design is non-trivial because of the complex geometry involved. Furthermore, bandgap generation in phononic crystals relies on wave scattering rather than energy dissipation, which leads to important local vibration amplitudes. In this paper, viscoelastic inserts are introduced with two goals: improve the crystal's tunability in terms of stiffness and bandgap properties, and employ damping to reduce internal resonances. First, the fundamental effect of viscous damping in phononic crystals is investigated through analytical equivalent models, showing that moderate damping improves the vibration isolation by merging multiple bandgaps. As a real-world example, highly viscoelastic polyurethane is studied by examining the influence of its frequency-dependent storage modulus and loss factor. Three crystals with different viscoelastic inserts are manufactured and the measured force transmissibility is successfully compared to the numerical models. The results show that the storage modulus correlates strongly with vibration isolation efficiency, defining both the frequency range and the maximum force reduction, whereas a loss modulus broadens the vibration isolation frequency range without negatively affecting its efficiency when it stays below a critical threshold value.

2026-05-31T14:53:42Z 24 pages, 18 figures, submitted to Results in Engineering Line Mardini Empa, Laboratory for Acoustics/Noise Control, Duebendorf, Switzerland Department of Mechanical Engineering campus Diepenbeek, KU Leuven, Belgium Andrea Bergamini Empa, Laboratory for Acoustics/Noise Control, Duebendorf, Switzerland Claus Claeys Department of Mechanical Engineering campus Heverlee, KU Leuven, Belgium Flanders Make@KU Leuven, Belgium Elke Deckers Department of Mechanical Engineering campus Diepenbeek, KU Leuven, Belgium Flanders Make@KU Leuven, Belgium Bart Van Damme Empa, Laboratory for Acoustics/Noise Control, Duebendorf, Switzerland http://arxiv.org/abs/2606.14861v2 2026-11-10T03:01:33Z

Breaking reciprocity in thermal radiation opens opportunities for energy harvesting, sensing, and thermal management. Traditional nonreciprocal radiative semiconductor devices need external magnetic field. In this work, we predict a series of magnetic topological materials for magnetic-field-free nonreciprocal thermal radiation in the infrared regime, by combining first-principles calculations with Maxwell electrodynamics. We find strong and broadband nonreciprocity in magnetic Weyl semimetals (e.g., Co$_3$Sn$_2$S$_2$), outperforming the conventional semiconductor such as InAs. Furthermore, we propose universal material design recipes: strong nonreciprocity requires a large anomalous Hall response relative to the optical loss, whereas the broadband response favors large optical loss and small dielectric dispersion. Our work establishes a predictive materials-discovery framework and quantitative design rules for next-generation magnet-free nonreciprocal thermal devices.

2026-06-12T18:03:36Z Published in Nano Letters Nano Lett. (2026) Yiyang Jiang Yufei Zhao Linxiao Zhu Binghai Yan 10.1021/acs.nanolett.6c02897 http://arxiv.org/abs/2611.13351v1 2026-11-09T23:24:37Z

The interplay among optical, electrical, and magnetic stimuli offers opportunities to control the functional response of spintronic heterostructures. Here, we investigate the field-dependent electrical response of MgO/IrMn$_3$/Py/Au under radio-frequency (RF) excitation, white-light illumination, and direct-current (DC) bias. Under a 20 MHz RF signal with a nominal power of 2 W, the measured voltage in the dark remains at several tens of nanovolts. Upon illumination with approximately 1 W of white light, a pronounced field-dependent feature emerges around 315--320 Oe, reaching 0.9--1.0 $μ$V. The illumination-associated differential voltage is approximately 0.95 $μ$V. A DC current of 1 mA produces a response of approximately 1 $μ$V, while the simultaneous application of RF, DC, and optical excitation increases the voltage to approximately 1.8 $μ$V. Magnetic characterization reveals exchange bias with a blocking temperature near 380 K, while electrical resistance measurements show a pronounced dependence on magnetic-field orientation, consistent with the anisotropic response of the heterostructure. These results demonstrate that the field-dependent electrical response can be modulated through combined optical and electrical excitation, involving magneto-optical interactions and spin-dependent transport phenomena, potentially including spin Hall-related contributions and the magnetic spin Hall effect. This work provides insights into coupled optical, electrical, and magnetic-field effects in heterostructures based on non-collinear antiferromagnets and ferromagnetic layers.

2026-11-09T23:24:37Z Adrielson Dias André José José Lucas Rodrigo Cristian José Holanda http://arxiv.org/abs/2608.08551v2 2026-11-09T22:50:05Z

A breakthrough in fundamental physics experiments measuring particle spin precession may happen if spin-transparent storage rings become adopted tools for such experiments. We present a new design of highly specialized table-sized storage rings, which use low-energy polarized electron beams and Mott polarimetry. Based on the spin transparency ansatz, the spin precession stemming from the magnetic dipole moment is canceled at any beam energy after an electron's turn along the periodic orbit in the ring. Meanwhile, a spin precession induced by the fundamental physics of interest, e.g., the electron's permanent electric dipole moment (EDM) and/or ultralight-dark-matter-mediated forces such as axions, will accumulate. However, capitalizing on such types of rings is not only desirable for measurements of EDMs and axion searches relevant to $CP$ violation and matter-antimatter asymmetry in the Universe, but may also find very promising applications in quantum computing.

2026-08-09T07:52:28Z 31 pages, 5 figures, 3 tables Vladimir Khachatryan Bill Riad Suleiman Bill Alberto Accardi Bill Kurt Aulenbacher Bill Carlos Ayerbe Gayoso Bill Marco Battaglieri Bill Devesh Bhattarai Bill Silviu Covrig Dusa Bill Yaroslav Derbenev Bill Forrest Friesen Bill Eric Fuchey Bill Joseph Grames Bill Paul Guèye Bill Tyler J. Hague Bill Ching Him Leung Bill Wenliang Bill Li Magno V. T. Machado Preet Mann Vasiliy Morozov Son Nguyen Michael Nycz Howard Oh Udit Raha Mario Reig Marco Schreck Nathaniel Sherrill Ye Tian Zakia Tithi Alexandre Vieira Erik Wrightson Zichen Yin http://arxiv.org/abs/2611.13242v1 2026-11-09T21:13:02Z

Gas optics holds promise for development of advanced optical elements with 2-3 orders of magnitude higher damage threshold than any solid-state optics. Here, we demonstrate a new concept for refracting the laser beam using vibrationally excited molecules as gas optics instead of traditional control of thermodynamic gas temperature. The transient, vibrational population density grating is formed in a CO2 gas by interfering two mid-IR lasers to imprint spatial modulation in the linear refractive index (Delta n0 >=2x10-5) of the neutral gas via enhancement of the molecular polarizability. It is increased by pumping the asymmetric stretching mode of CO2 at optimal wavelengths to resonantly produce a highly nonequilibrium state that increases the effective vibrational mode temperature to greater than 2000 K in a room temperature gas. The measured beam steering efficiency of such a volume gas grating exceeds 90% that makes this approach a candidate for producing other large-aperture, high-throughput molecular optics elements, with expected damage thresholds 0.5-1 kJ/cm2, much-needed for future ultrahigh-power lasers.

2026-11-09T21:13:02Z 8 pages manuscript (4 figures), 2 pages supplemental information (1 figure) Daniel Matteo Sergei Tochitsky Chan Joshi http://arxiv.org/abs/2611.12706v1 2026-11-09T17:00:39Z

Physical synapses are routinely described by a single number, the weight, that is identified with a conductance, a current, or a luminescence yield. This identification conflates two different objects: the internal state that the device stores, and the signal obtained when that state is read. Building on Chua's formulation of memristive systems, we separate the state variable, which evolves with the excitation history, from the observation map that converts it into a measured signal, and we define the weight as the outcome of a specified read protocol. Three platforms show the consequences: a memristor, in which the same voltage writes and reads; a memlumor, in which light both modifies the state and produces the photoluminescence that reports it; and an organic electrochemical transistor (OECT), in which the gate writes and the channel reads. In the transistor, two states prepared by different histories give the same channel current at a specific drain bias and become distinguishable again when the bias is changed, while the stored charge persists and the gate current continues to separate them. Published experiments provide precedents: a drain-bias-dependent cancellation of the OECT transient, and trapped charges in perovskite memlumors that are invisible to conventional time-resolved photoluminescence but revealed by a read-write-read sequence. A synaptic weight is therefore not a property of the material alone but of the material together with its readout, and reports of synaptic behavior should specify what is stored, what is measured, and how one is inferred from the other.

2026-11-09T17:00:39Z Gonzalo Rivera-Sierra Heyi Zhang Daiki Nishioka Takashi Tsuchiya Juan Bisquert http://arxiv.org/abs/2611.12651v1 2026-11-09T16:22:50Z

Field-effect electronic devices are in widespread use in communication, computing, data storage, and sensing applications. We demonstrate a neutronic field-effect transistor (NFET) that is analogous to the Datta-Das electron spin transistor and atomtronic devices. The NFET is based on a perfect-crystal Mach-Zehnder neutron interferometer with phase shifts applied to the spin and path degrees of freedom.

2026-11-09T16:22:50Z Dusan Sarenac Charles W. Clark Owen Lailey Muhammad Arif Wangchun Chen David G. Cory Michael G. Huber Joachim Nsofini Dmitry A. Pushin http://arxiv.org/abs/2611.12588v1 2026-11-09T15:40:58Z

We propose a spin-valve effect in which an insulating magnetic van der Waals multilayer controls the conductance of an adjacent non-magnetic conductor by electrostatic coupling, without transport-electrons entering the magnetic layers. The coupling is induced by the variations of the electronic structure when the relative orientation of the magnetization of adjacent monolayers changes from parallel to antiparallel, modifying both the dielectric constant and band alignment. We consider two types of coupling and device concepts: charge transfer to a graphene monolayer and capacitive coupling in a single-electron transistor. We use density functional calculations to assess the magnitude of the effect in various materials, including CrI$_3$, CrBr$_3$, CrCl$_3$ and NiBr$_2$. We predict magnetoresistance ratios in the range of 1.14-1.20 for the charge-transfer device and up to $10^3$ in the single-electron transistor.

2026-11-09T15:40:58Z 11 pages, 6 figures Jan Phillips Joaquín Fernández-Rossier http://arxiv.org/abs/2509.22665v3 2026-11-09T15:11:49Z

Ultrashort (femtosecond, fs) laser pulses have fascinating properties as they allow to confine optical energy on extreme scales in space and time. Such fs-laser pulsed beams can be seen as spatially thin slices of intense light that are radially and axially constrained to the micrometer scale, while simultaneously propagating at the extremely high speed of light. Their high peak intensities and their short time lapse makes such laser pulses unique tools for materials processing, as their duration is shorter than the time required to transfer absorbed optical energy, via electron-phonon coupling, from the electronic system of the solid to its lattice. Hence, the laser pulse energy remains localized during the interaction and does not spread via diffusion into the area surrounding the irradiated region. As one consequence, the fs-laser thus offers increased precision for material modification or ablation accompanied by a reduced heat-affected zone of only a few hundred nanometers. On the other hand, the high laser peak intensities can enable nonlinear material interactions that are rendering unique material excitation and relaxation pathways possible. In this chapter, we briefly review the reasons for the enormous success of ultrashort pulse lasers in materials processing - both for the processing of the surface or in the bulk of solids. We identify the underlying fundamental processes that can limit the precision or the up-scaling of the laser processing towards large volumes, areas, or processing rates. Strategies to overcome such limitations will be outlined and questions on the ultimate limits of laser material processing will be answered.

2025-09-04T10:33:31Z 107 pages, 50 figures, added final bibliographic information of published version and DOI-link Stefan Nolte Jörn Bonse Nadezhda M. Bulgakova 10.1007/978-3-032-17133-7_1 http://arxiv.org/abs/2606.00173v3 2026-11-09T14:40:58Z

Transport measurements that probe electrical resistivity of a material under varying external stimuli, such as temperature, magnetic field, optical illumination, and gate voltage, are among the most important experimental techniques in condensed matter physics. These measurements provide critical insights into the fundamental electronic properties of materials. In recent years, they have facilitated the discovery and exploration of intriguing physical phenomena (e.g., superconductivity and quantum oscillations) and unique device functionalities (e.g., photoresponse and electrostatic gating effects) in various emerging materials, particularly in the form of single crystals. However, unlike large-scale wafers or thin films, newly synthesized single crystals often pose substantial challenges in establishing reliable electrical contacts due to their irregular geometries, limited dimensions, inherent structural characteristics, and potential susceptibility to degradation. In this review, we highlight recent technological advancements in the fabrication of high-quality, lithographically defined multi-terminal electrodes on both exfoliable and non-exfoliable single crystals for transport measurements. Our work provides a practical guide for researchers seeking to select appropriate contact-fabrication strategies tailored to unique characteristics of emerging crystals.

2026-05-29T13:43:34Z Huandong Chen Abhay N. Pasupathy Jayakanth Ravichandran http://arxiv.org/abs/2611.12476v1 2026-11-09T14:22:42Z

We demonstrate high-efficiency, field-free superconducting diode behavior in W-N/FePt bilayers fabricated entirely by sputtering at room temperature. The devices combine amorphous W-N superconducting thin films with a 48-nm-thick FePt layer exhibiting remanent stripe-domain magnetization. We used lithographically patterned microbridges to compare W-N/FePt bilayers with single-layer W-N reference films at three nominal W-N thicknesses (18, 24, and 28 nm). The bilayers exhibit superconducting transition temperatures of approximately 4.1-4.3 K. At zero applied magnetic field, the current-voltage (I-V) characteristics exhibit pronounced nonreciprocity, controlled by the orientation of the in-plane remanent FePt magnetization relative to the transport current. The diode response is maximized for perpendicular alignment, reverses polarity upon magnetization reversal, and is strongly suppressed when the magnetization is aligned with the current. This behavior is consistent with asymmetric vortex entry and motion governed by the magnetic stray fields generated near the bridge edges. At 3 K with the remanent magnetization perpendicular to the current, increasing the W-N thickness from 18 to 28 nm widens the current interval between the dissipation thresholds for opposite polarities from about 0.3 to 1.55 mA. All three bilayers exhibit diode efficiencies of approximately 75-80% in this configuration.

2026-11-09T14:22:42Z 10 pages, 7 figures, 1 table. S. Russo and A. Sanson contributed equally to this work S. Russo A. Sanson Yeonkyu Lee Jeehoon Kim N. Haberkorn http://arxiv.org/abs/2611.12431v1 2026-11-09T13:55:55Z

In textbooks, a quantum-mechanical tunneling mechanism based on electron-wavefunction is used to explain Zener diode as well as ohmic contact resulting from a heavily doped p-n junction. In this study, an attempt in particle description is made to explain these devices. Any object at room-temperature emits infrared (IR) photons. The process of heavy doping can cause many defects. The self-absorption of the IR emission could be achieved through sub-band-gap excitations due to defects, creating carriers. In a heavily doped p-n junction device, some of the IR-generated carriers diffuse into the junction which has a built-in field. The built-in field sweeps out the carriers, creating IR photocurrent. The reverse leakage current of the p-n junction is regarded as the IR photocurrent according to a precedent where impurity-photovoltaic-effect is used to explain circuit devices (arXiv:2510.18226). Heavy doping results in not only a great many IR-generated carriers but also an avalanche effect at low voltage, producing Zener breakdown. Additionally, the impurity-photovoltaic-effect can make a reasonable contribution to explaining the temperature dependence of Zener breakdown. If the doping is very heavy, the heavily doped p-n junction can be altered to create an ohmic contact, which can also be explained in terms of impurity-photovoltaic-effect. Not only quantum mechanics, but also this photovoltaic mechanism in particle description can explain the above devices. Considering the wave-particle duality, the combination of quantum-mechanical and photovoltaic mechanisms is suggested to explain these devices. Each mechanism plays a big or small role in the explanation.

2026-11-09T13:55:55Z 4 pages, 3 figures Jianming Li