https://arxiv.org/api/QzQaGyltMH0nLjARyI95VIFdneU2026-04-01T10:00:00Z1077763015http://arxiv.org/abs/2603.29286v1Atomically Reconfigurable Single-Molecule Optoelectronics2026-03-31T05:40:45ZDeterministic control of excitonic properties is key to advancing nanoscale optoelectronic and quantum technologies and to understanding diverse physical, optical, chemical, and biological phenomena. At the molecular scale, these properties can be tuned through chemical modification, local-environment influence or charge-state manipulation. Yet, direct control of a molecule's transition dipole moment and its resulting light emission via atomic-scale structural modification has remained elusive. Here, using scanning tunnelling microscopy-induced luminescence, we show that a single structural parameter-the vertical displacement of the central metal atom in a planar phthalocyanine molecule on a decoupling layer-enables active tuning of the transition dipole, allowing either suppression or enhancement of emission. Exploiting this control, we realized a tunable homodimer switchable among three optical states: non-emissive, single-molecule-like emissive, and coupled states exhibiting subradiant and superradiant modes, directly revealing intermolecular dipole-dipole coupling. We further demonstrate a heterodimer in which resonant energy transfer can be turned on or off simply by controlling the acceptor's transition dipole moment. These findings not only establish atomic-scale displacement as a general strategy for optical molecular switching, but also demonstrate the reconfigurable engineering of excitonic interactions within molecular assemblies.2026-03-31T05:40:45ZAtif GhafoorSanteri NeuvonenThinh TranOscar Moreno SeguraYitao SunYaroslav PavlyukhRiku TuovinenJose L. LadoShawulienu Kezilebiekehttp://arxiv.org/abs/2603.23137v2Open Quantum System Theory of Muon Spin Relaxation in Materials2026-03-31T04:52:18ZWe present a non-Markovian theory of muon spin relaxation that treats the implanted muon as an open quantum spin coupled to a temporally correlated local magnetic environment. Using a Schwinger-Keldysh influence-functional formulation, we derive a spin stochastic equation of motion in which colored fluctuations and retarded memory torque appear on equal footing. In the appropriate limits, the theory reduces to standard Kubo-Toyabe descriptions. This enables quantitative, global analysis of zero-field (ZF) and weak longitudinal-field (LF) $μ$SR spectra beyond the strong-collision approximation. Applied to $\mathrm{Li}_{0.73}\mathrm{CoO}_2$, the approach separates quenched broadening from Li-driven fluctuations and extracts a thermally activated fluctuation rate over the intermediate-temperature window. It also reveals a distinct non-Markovian line-shape signature captured by a retarded backaction (memory) kernel that is most evident in the crossover between quasi-static and fast-fluctuation limits.2026-03-24T12:37:05ZElvis F. ArguellesOsamu Suginohttp://arxiv.org/abs/2603.18263v2Long photoexcited carrier lifetime in a stable and earth-abundant zinc polyphosphide2026-03-31T04:21:46ZHalide perovskites have revolutionized optoelectronics by demonstrating that long carrier lifetime can be achieved in materials processed in relatively uncontrolled environments, whereas conventional inorganic semiconductors typically suffer from short carrier lifetime unless very carefully prepared and postprocessed. Here, we report the discovery of exceptionally long photoexcited carrier lifetime in monoclinic ZnP2, effectively bridging the carrier lifetime gap between direct-gap inorganic semiconductors and halide perovskites. Through computational screening, ZnP2 is identified as a long carrier lifetime semiconductor characterized by an unconventional polyphosphide bonding, combining covalently bonded phosphorus chains and polar-covalent Zn-P tetrahedra. Experimentally, ZnP2 crystals synthesized from low-purity precursors exhibit bright band-to-band photoluminescence at 1.49 eV and carrier lifetimes of up to 1 $μ$s. Further analysis reveals that the polyphosphide bonding of ZnP2 suppresses the formation of deep intrinsic defects, making it defect resistant. Combined with its remarkable environmental stability, ZnP2 presents a highly promising material for solar absorbers and light emitters. Our work illustrates that underexplored inorganic materials spaces with unusual chemical bonding hold great promise for discovering novel optoelectronic materials.2026-03-18T20:36:27ZZhenkun YuanGenevieve AmobiShaham QuadirSmitakshi GoswamiGuillermo L. EsparzaGideon KassaGayatri ViswanathanJoseph T. RaceMuhammad R. HasanJack R. PalmerSita DuguYagmur CobanAndriy ZakutayevObadiah G. ReidDavid P. FenningKirill KovnirSage R. BauersJifeng LiuGeoffroy Hautierhttp://arxiv.org/abs/2603.20330v2Competing skin effect and quasiperiodic localization in the non-Hermitian Su-Schrieffer-Heeger chain: Reentrant delocalization, spectral topology destruction, and entanglement suppression2026-03-31T03:22:22ZWe investigate the interplay between the non-Hermitian skin effect and Aubry-André-Harper (AAH) quasiperiodic disorder in a one-dimensional Su-Schrieffer-Heeger (SSH) chain with nonreciprocal hopping. By exact diagonalization, transfer-matrix analysis, and an analytical similarity-transformation argument, we map the full ( , $δ$) phase diagram, where A is the AAH modulation strength and the nonreciprocity parameter. We identify five distinct regimes: ( ) topological with extended bulk, (II) AAH-localized, (III) skin-localized, (IV) fully localized, and a previously unreported (V) competition regime exhibiting reentrant partial delocalization, in which intermediate quasiperiodic disorder disrupts the directional skin accumulation before ultimately Anderson-localizing all states. Using phase-averaged diagnostics and finite-size scaling, we confirm that the reentrant regime is robust, characterized by a non-monotonic inverse participation ratio that sharpens with increasing system size. We derive an analytical expression for the modified localization boundary $λ_{c}(δ)=2\sqrt{v_{eff}w}$ with $v_{vff}=\sqrt{v^{2}-δ^{2}}$, which agrees with numerical Lyapunov exponent calculations. We further show that quasiperiodic disorder progressively unwinds the complex spectral loops, destroying the point-gap topology at a critical strength distinct from the band-topological transition ; that the skin effect suppresses entanglement entropy to near-zero values while sufficiently strong AAH disorder partially restores it ; and that the SSH sublattice structure absent in the widely studied non-Hermitian AAH chain is essential for producing the five-phase landscape, as demonstrated by direct comparison with the non-dimerized limit.2026-03-20T06:17:43Z8 pages, 11 figuresSouvik Ghoshhttp://arxiv.org/abs/2603.29202v1Quantum anomalous Hall effect in monolayer transition-metal trihalides2026-03-31T03:14:13ZWe present systematic first-principles results for the electronic and magnetic properties of two-dimensional transition-metal trihalide monolayers MX3 (M = V, Cr, Mn, Fe, Ni, Pd; X = F, Cl, Br, I), focusing on their potential to host the quantum anomalous Hall effect. In particular, MnF3 and PdF3 exhibit a spin-polarized Dirac cone at the K point, spin-orbit coupling opens a sizable gap with a nonzero Chern number. Nanoribbon slab calculations reveal gap-crossing chiral edge states, establishing the nontrivial topological character. Beyond these case studies, our systematic screening clarifies general trends across the MX3 family and provides insight into how electronic configuration and spin-orbit coupling cooperate to produce magnetic and topological phases in two-dimensional magnets.2026-03-31T03:14:13Z6 pages, 5 figures, submitted for publicationThi Phuong Thao NguyenKunihiko Yamauchihttp://arxiv.org/abs/2104.05155v2Intrinsic staggered spin-orbit torque for the electrical control of antiferromagnets -- application to CrI$_3$2026-03-31T03:12:23ZSpin-orbit torque enables the electrical control of the orientation of ferromagnets' or antiferromagnets' order parameter. In this work we consider antiferromagnets in which the magnetic sublattices are connected by inversion+time reversal symmetry, and in which the exchange and anisotropy energies are similar in magnitude. We identify the staggered dampinglike spin-orbit torque as the key mechanism for electrical excitation of the Néel vector for this case. To illustrate this scenario, we examine the 2-d Van der Waals antiferromagnetic bilayer \ch{CrI3}, in the $n$-doped regime. Using a combination of first-principles calculations of the spin-orbit torque and an analysis of the ensuing spin dynamics, we show that the deterministic electrical switching of the Néel vector is the result of dampinglike spin-orbit torque which is staggered on the magnetic sublattices.2021-04-12T01:57:47ZPhysical Review B 104, 224414 (2021)Fei XuePaul M. Haney10.1103/PhysRevB.104.224414http://arxiv.org/abs/2603.29198v1Long-range interaction effects on the phase transition, mechanical effect, and electric field response of BaTiO3 by machine learning potentials2026-03-31T03:05:12ZBulk materials are governed by both short-range and long-range interactions, both of which are naturally captured in conventional density functional theory (DFT) calculations through Ewald summation of electrostatic contributions. In contrast, machine learning potentials (MLPs) typically rely on local atomic environment descriptors, and long-range interactions are often neglected. Such approximations may introduce systematic energetic errors and lead to inaccuracies in predicted material properties. To systematically investigate the impact of long-range interactions in ferroelectric BaTiO3 within the framework of MLPs, we developed a long-range MACELES model and compared its performance with the previously reported BaTiO3 MACE model across four key properties (phonon dispersion, phase transition behavior, mechanical response, and ferroelectric properties including dielectric constants). We find that qualitative behaviors, including phase transitions, stress-induced polarization switching, and polarization-electric field hysteresis, are consistently reproduced by both models. In contrast, quantitative properties such as transition temperatures, elastic constants, and dielectric constants exhibit systematic improvements in MACELES model, highlighting the importance of incorporating long-range electrostatics for accurately describing the structural and dielectric responses of BaTiO3. These results suggest that while long-range interactions play a role in improving quantitative accuracy, their omission does not significantly alter the qualitative ferroelectric behavior of BaTiO3.2026-03-31T03:05:12Z11 pages, 5 figures + Supplementary Information (4 pages, 3 figures), submitted to APL Machine LearningPo-Yen ChenTeruyasu Mizoguchihttp://arxiv.org/abs/2603.29189v1Phonon Signatures of Near-Room-Temperature Phase Transition in Quasi-One-Dimensional Bi4I4 Topological van der Waals Material2026-03-31T02:54:15ZThe quasi-one-dimensional material Bi4I4 hosts two crystallographically similar polymorphs that realize distinct topological insulating phases separated by a first-order structural transition near room temperature. This transition occurs without a change in space group, arising instead from a subtle rearrangement of chain stacking registry. Polarization-resolved Raman spectroscopy directly resolves this structural-topological phase transition through abrupt, hysteretic modifications of the phonon spectrum. Angle-dependent measurements establish the symmetry of the dominant Raman-active modes and require a complex Raman tensor formalism to account for absorption-induced phase effects. Across the transition, selected phonon modes exhibit discontinuous, reversible shifts in frequency, linewidth, and relative intensity despite the absence of a space-group change. Density functional theory calculations reproduce the direction of the observed phonon renormalizations and confirm their sensitivity to stacking-dependent force constants. These results demonstrate that polarization-resolved Raman spectroscopy can detect subtle stacking-driven structural rearrangements that underlie topological band character, even when global crystallographic symmetry remains unchanged. The obtained results provide valuable insights into the interplay among lattice dynamics, structural distortions, and topological properties in this class of low-dimensional materials, with strong potential for unique functionalities.2026-03-31T02:54:15Z36 pages, 8 figuresNidhish Thiruthukkal PuthenveettilTopojit DebnathClayton MantzZahra Ebrahim NatajJordan TeeterMd. Shafayat HossainFariborz KargarTina T. SalgueroRoger K. LakeAlexander A. Balandinhttp://arxiv.org/abs/2603.29174v1Role of surface states and band modulations in ultrathin ruthenium interconnects2026-03-31T02:34:44ZMitigating the RC delay from transistor miniaturization is essential for next-generation devices, driving a focus on interconnect electrical performance. Current copper-based interconnects face a critical challenge, that their resistivity sharply increases at the nanometer-scale due to surface and grain boundary scattering. Therefore, there is a pressing need for techniques that reduce resistance in ultrathin metal films. In this study, we employ the density functional theory to investigate how the intrinsic electronic structure of thin films impacts conductivity as a function of thickness. Notably, our analysis of ruthenium slab structures shows that surface states significantly influence thickness-dependent resistivity. It reveals that vacuum-terminated Ru slab exhibits decreasing resistivity with the decrease in thickness, whereas oxygen-terminated Ru slab shows the opposite trend. This difference is fundamentally attributed to the presence or absence of surface states, highlighting the importance of surface engineering in optimizing interconnect performance.2026-03-31T02:34:44ZCurr. Appl. Phys. (2026)Gyungho MaengSubeen LimMi Gyoung LeeBonggeun ShongKyeongjae ChoYeonghun Lee10.1016/j.cap.2026.03.020http://arxiv.org/abs/2603.23851v2Coupling of phase transition, anharmonicity, and thermal transport in CaSnF$_6$2026-03-31T02:10:59ZUnderstanding the coupling between structural phase transitions and thermal transport is essential for designing functional materials with tunable properties. Here, we investigate this interplay in CaSnF$_6$ by combining first-principles calculations with a machine-learned neuroevolution potential that enables large-scale molecular dynamics simulations across a wide temperature range. The simulations accurately capture the first-order structural phase transition and associated lattice dynamics. We show that the negative thermal expansion originates from low-energy rigid unit modes involving cooperative rotations of corner-sharing [CaF$_6$]$^{4-}$ octahedra, which induce bond-angle bending and volume contraction. At the same time, strong anharmonicity, dominated by four-phonon scattering, plays a central role in suppressing lattice thermal conductivity ($κ_L$). Crucially, non-equilibrium simulations reveal a pronounced non-monotonic anomaly in $κ_L$ near the phase transition, deviating from the conventional $\sim 1/T^α$ behavior and providing direct transport evidence of lattice reconstruction. These results establish a unified mechanism linking lattice geometry, anharmonic vibrational dynamics, and thermal transport, and highlight the potential of machine-learned potentials for bridging atomic-scale phase transitions with macroscopic transport properties.2026-03-25T02:21:43ZDaxue HaoHao HuangGeng LiYu WuShuming Zenghttp://arxiv.org/abs/2603.29138v1Robust Flat Magnetoresistivity in D0$_3$-Fe$_3$Ga Driven by Chiral Anomaly2026-03-31T01:38:32ZTopologically non-trivial nodes emerging from flat-band crossings not only enhance unconventional topological responses but also play a fundamental role in exploring correlation-driven topological physics. Here, we report the exceptionally robust chiral-anomaly-dominated transport in D0_3-Fe_3Ga. First, we observe a combination of positive and negative magnetoresistance, ideal planar longitudinal magnetoresistance (PLMR), and the planar Hall effect (PHE). Second, ultra-low-temperature resistivity exhibits pronounced non-Fermi-liquid (NFL) behavior, accompanied by the emergence of giant intrinsic anomalous Hall conductivity (AHC), in excellent agreement with our DFT calculations, which confirm the existence of tilted Weyl points arising from crossings of nearly three-dimensional (3D) flat bands. Most remarkably, we detect an exceptionally robust flat magnetoresistance (flat-MR) that persists without decay up to 33 T. This set of phenomena provides strong evidence that the Fermi level intersects the flattened Weyl crossings, offering confirmation of a topological flat-band semimetal. D0_3-Fe_3Ga presents a promising magnetic platform for quantum device innovations.2026-03-31T01:38:32Zmain text 18 pages, 4 figuresRuoqi WangXinyang LiBo ZhaoHaofu WenXin GuShijun YuanLangsheng LingChuanying XiZe WangKunquan HongLiang MaKe XiaTaishi ChenJinlan Wanghttp://arxiv.org/abs/2603.29066v1Energy level alignment of vacancy-ordered halide double perovskites2026-03-30T23:09:17ZVacancy-ordered double perovskites have emerged as lead-free alternatives, offering remarkable stability and compositional tunability for optoelectronic applications. In this study, we provide first-principles insights into their electronic properties, surface stability, and energy level alignment using a non-empirical, dielectric-dependent hybrid functional. For a representative family of Cs$_2$MX$_6$ compounds, with M = Zr, Sn, Te, and X= Cl, Br, I, our calculations reveal that the predicted bulk electronic band gaps are in excellent agreement with those obtained using the state-of-the-art GW method, validating the accuracy of our approach. We investigate the stability of these materials under simulated experimental conditions, considering both the rich and poor chemical potentials of their precursor salts. Our results indicate distinct regions of surface energy stability that favor CsX terminations. In contrast, MX$_4$ terminations show in-gap surface states, which can act as trap states and reduce carrier lifetime. Finally, based solely on the intrinsic absolute energy levels, we identify promising candidates as charge transport and injection layers for typical photovoltaic and light-emitting applications. This study provides a detailed map of energy level alignment at Cs$_2$MX$_6$ surfaces, offering valuable design principles for the development of next-generation Cs$_2$MX$_6$-based optoelectronic devices.2026-03-30T23:09:17ZIbrahim Buba GarbaGeorge Volonakishttp://arxiv.org/abs/2603.29065v1Oxide-nitride heteroepitaxy for low-loss dielectrics in superconducting quantum circuits2026-03-30T23:05:18ZSuperconducting qubits show great promise for the realization of fault-tolerant quantum computing, but lossy, amorphous dielectrics limit current technology. Identifying highly crystalline and stoichiometric dielectrics with intrinsically low microwave loss is therefore a central materials challenge, yet experimentally validated platforms remain scarce. In this work, we integrate a crystalline dielectric into a heteroepitaxial TiN/$γ$-Al$_2$O$_3$/TiN trilayer grown via pulsed laser deposition. Correlative high-resolution imaging, diffraction, and spectroscopy measurements confirm the single-crystal quality and chemical integrity of all layers, with minimal defects and limited anion interdiffusion across the oxide-nitride interfaces. Using microwave lumped-element resonators with parallel-plate capacitors, we report the first direct measurement of the dielectric loss of epitaxial $γ$-Al$_2$O$_3$, for which we find a low intrinsic two-level system loss, $δ_{\text{TLS}}^0 = (2.8 \pm 0.1) \times 10^{-5}$. These results establish heteroepitaxial oxides on transition metal nitrides as an attractive materials platform for superconducting quantum circuits, particularly for integration into compact device architectures such as merged-element transmons and microwave kinetic inductance detectors.2026-03-30T23:05:18Z38 pages, 10 figuresDavid A. Garcia-WettenMitchell J. WalkerPeter G. LimAndré VallièresMaria G. Jimenez-GuillermoMiguel A. AlvaradoDominic P. GoronzyAnna GrassellinoJens KochVinayak P. DravidMark C. HersamMichael J. Bedzykhttp://arxiv.org/abs/2603.29037v1Singing Materials: Initial experiments in applying sonification to phonon spectra2026-03-30T22:09:52ZSolid materials may appear static, but at the atomic scale they are in constant vibrational motion. These vibrations, described by phonons, govern many key material properties, including structural stability, mechanical strength, optical behaviour, and thermal transport. Understanding phonon physics is therefore central to the rational design of materials with targeted functionalities.
Singing Materials is a research project that explores how sonification can be applied to this domain. In this work, we introduce \texttt{SingingMaterials}, a modular Python package for sonifying materials simulation data. The software interfaces with the Materials Project database and is designed to be extensible, enabling the incorporation of additional sonification strategies and data sources. Built using the Sonification Toolkit \texttt{Strauss}, the current implementation supports three core approaches: spectral, synthesised, and sample-based.
We demonstrate these approaches using phonon density-of-states data and evaluate their effectiveness through a user study, investigating whether listeners can distinguish differences in material properties from their auditory representations. The results show that sonification can provide an interpretable and complementary approach for exploring vibrational materials data.2026-03-30T22:09:52ZLucy WhalleyRose ShepherdJorge BoehringerShelly KnottsPaul VickersGeorge CaseltonChristopher HarrisonBennett HoggDaniel RatliffCarol DavenportAntonio Portashttp://arxiv.org/abs/2603.29006v1Electrically tunable orbital coupling and quantum light emission from O-band quantum dot molecules2026-03-30T21:09:12ZWe present the observation of electrically tunable quantum coupling of orbital states in individual InAs/InGaAs quantum dot molecules emitting in the telecom O-band (~1300 nm). By tuning the static electric field along the growth axis of the QD-molecule, we observe pronounced anticrossings between excitonic transitions and determine the dependence of the interdot electron tunnel coupling on the interdot separation. As the electric field applied along the growth axis of the QD-molecules increases, positively charged exciton complexes sequentially emerge in the time-integrated emission spectra due to electron escape from the system while holes remain trapped. Moreover, for strong pumping, biexciton emission from the O-band molecules is identified. We demonstrate single-photon emission from the InAs/InGaAs QD-molecule emitting around 1300 nm with a g(2)(0) = 0.017(2) and explore the impact of tuning orbital coupling on the second-order correlation function.2026-03-30T21:09:12Z9 pages, 4 figuresP. S. AvdienkoL. HanschkeQ. BuchingerN. AkhlaqI. LubianskiiE. WeberH. RiedlM. KampT. Huber-LoyolaS. HoeflingA. PfenningK. MuellerJ. J. Finley