Turing patterns on non-fluctuating surfaces under mechanical stresses

2026-07-16T09:09:18Z

This paper presents a numerical study of Turing patterns (TPs) governed by reaction diffusion equations for the activator $u$ and the inhibitor $v$ on two- and three-dimensional lattices without vertex fluctuations. In this framework, $u$ and $v$ are fixed at discrete spatial locations, as pigment cells on zebrafish skin or shell patterns. Mechanical effects are incorporated through the Finsler geometry modeling formulation, which introduces an internal degree of freedom, $\vecτ$, representing the direction of mechanical stress. A tensile-stress formula based on the Gaussian bond potential is shown to be well defined on non-fluctuating lattices, enabling the entropy associated with stress relaxation to be evaluated in a manner analogous to that on fluctuating surfaces. The results indicate that biological TPs respond to external mechanical forces in much the same way as TPs on fluctuating membranes. Simulation codes are provided in the Supplementary Material.

Tunable Magneto-Excitonic Coupling in Alloyed van der Waals Antiferromagnet

2026-07-16T08:52:16Z

The unique coupling between magnetic order and photo-generated excitons, electron-hole pairs bound by Coulomb interaction, in layered magnetic semiconductors offers a powerful mechanism for controlling light-matter interactions. In the van der Waals antiferromagnet CrSBr, this coupling is exceptionally strong and manifests distinctly between two coexisting excitonic states: the localised, Frenkel-like XA exciton and the more delocalised, Wannier-Mott-like XB exciton, providing a unique playground for the optical control of magnetism. Here, we reveal how chlorine incorporation reshapes the magneto-optical interplay in CrSBr1-xClx by simultaneously modifying its electronic structure, excitonic properties, and magnetic interactions. Combining magneto-optical spectroscopy up to 85 T with state-of-the-art quasiparticle self-consistent GW (QSGW) calculations on alloy supercells, we show that Cl insertion progressively localises the excitonic wavefunctions and drives both states toward a more Frenkel-like regime. This evolution is accompanied by a systematic reduction of the magnetic-field-induced energy renormalisation, most prominently for the XB exciton. Our work connects exciton character directly to magneto-excitonic coupling. Furthermore, it establishes compositional alloying as an effective strategy for engineering the coupling between magnetic and optical properties in van der Waals magnetic semiconductors.

Direct observation of anisotropic exciton dispersion in the 2D semiconductor CrSBr

2026-07-16T08:22:11Z

We report momentum-resolved measurements of exciton dispersion in multilayer CrSBr using defocus-engineered electron energy-loss spectroscopy, supported by first-principles calculations. A pronounced in-plane anisotropy is observed, with the exciton exhibiting a linear dispersion along $Γ$Y within $\lvert \boldsymbol{q} \rvert$ < 0.007 Å$^{-1}$, while remaining nearly dispersionless along $Γ$X. The slope reaches 7.02 eV Å, among the largest reported in low-dimensional systems. The calculations reproduce the experimentally observed linear dispersion, confirming its intrinsic origin. We attribute the anisotropic dispersion to the long-range electron--hole exchange interaction, enhanced by strong out-of-plane confinement and governed by the directional selection rules of the transition dipole moment. Comparative measurements across the magnetic phase transition from the paramagnetic to the A-type antiferromagnetic state show that the dispersion remains essentially unchanged, indicating negligible coupling between exciton propagation and magnetic order. These results establish CrSBr as a model system for investigating anisotropic exciton dynamics in low-symmetry layered semiconductors.

Emergent induction in magnetic Weyl semimetals

2026-07-16T08:11:06Z

We theoretically study emergent electromagnetic responses in Weyl semimetals. Focusing on magnetic Weyl semimetals, we develop a general theory of emergent induction driven by magnetic dynamics. We show that magnetoelectric (ME) responses in Weyl semimetals give rise to emergent induction mediated by magnetization dynamics. Using effective two-band models for magnetic Weyl semimetals, we derive a formula for the ME response that includes both intraband and interband contributions. The resulting formula shows that the intraband contribution is proportional to the relaxation time $τ$, whereas the interband contribution is associated with the separation of the Weyl nodes. Applying the general formula to a model of polar Weyl ferromagnets, we demonstrate that the dynamics of the toroidal moment is closely related to the emergent inductive response in polar Weyl ferromagnets, as recently discovered by Suzuki et al. [Y. Suzuki et al. arXiv:2607.12322]. The chemical-potential dependence of the inductance indicates that the emergent electromagnetic response is enhanced in the energy range of the Weyl dispersion, reflecting the topological nature of Weyl semimetals.

Spin fluctuation-mediated unconventional superconductivity in ThFeAsN from first-principles

2026-07-16T07:40:15Z

Superconducting (SC) pairing mechanism, origin of high $T_c$ and symmetry of SC order parameter in Fe-based superconductors are among the important unsolved problems in condensed matter and materials physics. We study the SC properties of ThFeAsN, a Fe-based high $T_c$ superconductor, by {\it ab initio} superconducting density functional theory calculations with electron-phonon coupling, screened static and dynamic electron-electron Coulomb repulsion and spin fluctuation (SF) mediated pair-interaction fully taken into account. Our calculations reveal that ThFeAsN is a SF-mediated multiband superconductor with the calculated $T_c$ of 22.4 K and the $d_{xy}$-wave SC order parameter with different signs on different Fermi surface sheets, in consistent with experiments. We also present distinct SC properties such as quasiparticle density of states and ultrasonic attenuation coefficient which can be immediately verified by experiments.

Surface Optimization of Superconducting Aluminum Resonators for Robust Quantum Device Fabrication

2026-07-16T06:01:24Z

Aluminum (Al) remains the central material for superconducting qubits, and considerable effort has been devoted to optimizing its deposition and patterning for quantum devices. However, post-processing strategies focused on oxide removal of niobium (Nb) and tantalum (Ta) -based resonators using buffered oxide etch (BOE), which can not be used for Al. This challenge becomes particularly relevant for industry-scale fabrication with multi-chip bonding, where delays between sample preparation and cooldown require surface treatments that preserve low dielectric loss during extended exposure to ambient conditions. In this work, we investigate surface modification approaches for Al resonators subjected to a 24-hour delay prior to cryogenic measurement. Passivation using self-limiting oxygen and fluorine chemistries was evaluated utilizing different plasma processes. Remote oxygen plasma treatment reduced dielectric losses, in contrast to direct oxygen plasma. A fluorine-based plasma process was developed that passivated the Al surface for subsequent BOE treatment. However, the fluorine content in the surface resulted in higher loss, identifying fluorine as an unsuitable passivation material for Al resonators. Above all, selective oxide removal using HF (hydrogen fluoride) vapor and phosphoric acid yielded median dielectric losses as low as $\tildeδ_\mathrm{LP} = 5.7 \times 10^{-7}$ ($Q_\mathrm{LP} \approx 1.7\,\mathrm{M}$) with $\tildeδ_\mathrm{TLS} = 3.6 \times 10^{-7}$ ($Q_\mathrm{TLS} \approx 2.8\,\mathrm{M}$) in the single photon regime. Selective oxide removal provides a promising pathway for robust Al-based qubit fabrication, as it preserves low dielectric losses for a 24-hour delay before cooldown.

Numerical and experimental framework for bending elasticity of highly flexible slender structures

2026-07-16T05:43:19Z

Slender structures are highly flexible, spanning several orders of magnitude in length scale. Their deformation depends on the slenderness of their cross sections, highlighting that the elasticity and geometry of structures are intrinsically coupled. The deformation of the cross-section becomes significant, particularly when tubes and pipes are subjected to bending, known as the Brazier instability. Although the bending performance of slender structures is quantified experimentally using a canonical three-point bending test, their numerical counterparts remain under-explored because complex contact mechanics must be implemented in simulations. In this study, we develop a computational framework to simulate experimental three-point bending tests using a hybrid material point method (hybrid-MPM) approach, which integrates Lagrangian finite element and Eulerian finite difference frameworks. We adapt our framework to elastic tubes and tape springs as canonical examples that exhibit characteristic bending deformation in which the cross-sectional and lengthwise bending are coupled. The predictions of numerical simulations are validated against desktop experiments and classical theory. The excellent agreement between the simulation and the experiments implies that the hybrid-MPM framework provides a robust computational framework for predicting the large deformation of structures involving complex contact, such as soft robots and deployable structures.

Second-Order Optical Nonlinearity of AlScN Films Grown By Molecular Beam Epitaxy

2026-07-16T05:35:39Z

Alloys of AlN have rapidly emerged as a material platform for nonlinear optics. In this paper, we measure the second-order optical nonlinearity of AlScN films grown directly on nitrided c-plane sapphire by molecular beam epitaxy. This direct growth approach, which bypasses a thick AlN buffer layer, allows us to isolate the true nonlinear response of the AlScN film. Our results show a large enhancement of d31, but a suppression of d33 in AlScN films compared to AlN. We observe that d31 can be as high as 4.92 pm/V , which is 60 times larger than that of AlN. The development of AlScN-based photonic devices can enable energy-efficient nonlinear optical operations that can be epitaxially integrated with electronic and photonic devices based on Si, GaN and AlN.

Full-data accuracy with fewer labels for training and fine-tuning machine-learning force fields

2026-07-16T01:59:47Z

Machine-learning force fields (MLFFs) are reliable only near their training distribution, making efficient construction of diverse training sets a major bottleneck for both train-from-scratch and foundation fine-tuning workflows. Active learning can reduce this cost, but standard model-committee uncertainty is impractical for foundation MLFFs because each committee member requires a separate fine-tuning run. We present an active-learning workflow based on last-layer-projection regression (LLPR), a forward-pass-cheap per-configuration uncertainty estimator. Across molecular, condensed-phase, and electrolyte systems, LLPR identifies compact, high-value training sets that recover full-data accuracy using only a small fraction of electronic-structure labels. In foundation-model fine-tuning, LLPR-selected configurations reach the full-pool fine-tuning ceiling with substantially fewer labels than random selection. In iterative electrolyte fine-tuning, LLPR detects unphysical local coordination before DFT labelling, provides an absolute force-error threshold, and enables automatic termination of the learning loop. The resulting models reproduce reference density and ion-coordination structure, providing a scalable uncertainty-quantification strategy across MLFF training regimes.

Fractional quantum ferroelectric control of spin-valley locking and valley Hall effects in altermagnetic monolayer Cr2S2

2026-07-16T01:23:59Z

Fractional quantum multiferroics, arising from the coupling between fractional quantum ferroelectricity (FQFE) and altermagnetism (AM), provide a promising platform for nonvolatile control of momentum dependent spin splitting in systems with zero net magnetization. However, extending this FQFE-AM coupling to valley degrees of freedom and Berry curvature driven valley Hall effects remains largely unexplored. Here, using first-principles calculations, we demonstrate that monolayer Cr2S2 realizes a two dimensional FQFE-AM platform with two switchable FQFE states connected by composite symmetry operations combining a fractional lattice translation with time reversal or parity-time reversal. We show that FQFE switching reverses the AM spin-polarized band structure and interchanges the spin characters of the X and Y valleys without rotating the Néel vector, thereby enabling polarization switchable spin-valley locking. Moreover, the two FQFE states exhibit reversed Berry curvature distributions, which, together with the switched spin-valley locking, enable polarization controlled valley Hall effects under both electron and hole doping. These results demonstrate a symmetry based mechanism for nonvolatile electrical control of AM spin splitting, spin-valley locking, and valley Hall effects, offering a general route toward low-power valleytronic devices based on FQFE-AM coupling.

Multistate ferroelectricity and switchable layer-locked anomalous valley Hall effects in bilayer ReIrGe2Se6

2026-07-16T01:17:45Z

Two-dimensional multiferroic materials, which combine magnetic and ferroelectric (FE) orders with strong magnetoelectric coupling, represent ideal platforms for high-density information storage and low-power multistate electronics. However, the intrinsic bistability of conventional ferroelectricity poses a substantial challenge to realizing multiple nonvolatile states and programmable Berry-curvature driven transport responses within a single material. Here, using first-principles calculations, we predict multistate ferroelectricity in AA0-stacked bilayer ReIrGe2Se6. The system hosts four energetically stable FE polarization configurations, among which three are connected through reversible switching pathways, while the fourth exhibits a unidirectional switching pathway. The distinct FE configurations further give rise to a cyclic semiconductor-metal-semiconductor evolution in the electronic structure. Notably, FE polarization switching is intimately coupled to layer degrees of freedom and Berry curvature. The layer-dependent electrostatic potential associated with different FE configurations controls the layer character of the band-edge states, thereby locking the Berry curvature to specific layer channels. As a result, bilayer ReIrGe2Se6 enables switching between an anomalous valley Hall effect and a layer-locked anomalous valley Hall effect, providing nonvolatile control of layer, valley, and spin-resolved transport responses. In addition, magnetization reversal switches the valley and spin channels while preserving the layer-resolved character. These results establish bilayer ReIrGe2Se6 as a multistate ferroelectric platform for programmable Berry-curvature related transport, offering microscopic insight into topology based multifunctional electronic and valleytronic devices.

Interlayer sliding direction as a symmetry selector in altermagnetic bilayer Fe2WS4: Switchable anomalous Hall and anomalous valley Hall effects

2026-07-16T01:12:20Z

Altermagnets combine compensated collinear magnetic order with momentum-dependent spin splitting, offering a promising platform for coupling spin and valley degrees of freedom with ferroelectricity and Berry-curvature driven transport in the absence of net magnetization. However, achieving nonvolatile and selective control of these intertwined degrees of freedom remains a key challenge. Here, using first-principles calculations, we show that the direction of interlayer sliding serves as a symmetry selective control parameter in altermagnetic bilayer Fe2WS4. Diagonal sliding breaks inversion symmetry and produces two sliding ferroelectric states with opposite out-of-plane polarizations. Reversal of the ferroelectric polarization switches the momentum-dependent spin texture and reverses the anomalous Hall conductivity, revealing strong magnetoelectric coupling and enabling a ferroelectrically switchable anomalous Hall effect. In contrast, axial sliding preserves inversion symmetry but breaks the crystalline symmetry relating the X and Y valleys, leading to reversible valley polarization and a switchable anomalous valley Hall effect. These results establish the direction of interlayer sliding as a nonvolatile symmetry selector for controlling ferroelectricity, spin texture, valley polarization, and Hall transport responses in two-dimensional altermagnetic bilayers.

Plasma and Thermal Processing Leading to Spatial and Temporal Variability of the Trapped O2 at Europa and Ganymede

2026-07-16T00:02:32Z

We describe the physical processes that affect the formation, trapping, and outgassing of O2 at Europa and Ganymede. Following Voyager measurements of their ambient magnetospheric plasmas, laboratory data indicated that observed ions, mostly ejected from volcanic Io, would in turn impact and sputtering their surfaces, decomposing the ice producing thin oxygen atmospheres. Subsequently, Europa and Ganymede's O2 atmospheres were inferred from O aurora, condensed O2 bands identified at 5773 and 6225 Angstroms, and their atmospheres were shown to have a dusk/dawn enhancement, confirmed by recent Juno data. Although plasma produces these observables, processes that occur within the topmost surface are not well understood. Here, we note that the incident plasma particles produce nonequilibrium defect density locally in the surface ice grains. Defect diffusion within these grains leads to the formation of voids and molecular products, some of which are volatile. Although some volatiles are released into the satellite atmospheres, others are trapped at defect sites or trapped in voids, creating bubbles whose lifetimes are limited by the plasma-induced destruction rate. We discuss how trapping competes with annealing of the radiation damage, and how hemispheric differences at Europa and Ganymede, roughly determine the observed trend with latitude of O2 bands. We discuss the relative importance of condensed O2 and O2 adsorbed on regolith grains as atmospheric sources, accounting for dusk/dawn enhancements and temporal variability reported in condensed O2 band depths. Since plasma-induced damage and thermal annealing timescales drive oxidant variability on icy moons (likely also Callisto, Dione, and Rhea), they can help determine volatile downwelling, a potentially metabolic source for their oceans, and upwelling of other trapped oxidants (e.g. CO2) suggestive of ongoing geologic activity.

Single-shot laser-pulse-induced magnetization reversal in CoFeB/MgO-based magnetic tunnel junctions

2026-07-15T23:52:46Z

We demonstrate single-shot laser-pulse-induced magnetization reversal in rare-earth-free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin-transfer torque magnetic random-access memory (STT-MRAM). By tuning the Ru capping layer thickness, we modify the laser energy absorption profile and observe magnetization reversal from the parallel (P) to antiparallel (AP) state, with switching observed for $t_\text{Ru} \geq 2.0\,$ nm. Furthermore, we detect magnetization reversal in a micro-scale MTJ device via the tunnel magnetoresistance (TMR) effect. Our findings suggest that ultrafast spin transport, dipolar interactions, or a combination of both may contribute to the switching process, although the precise mechanism remains to be clarified. This work represents a significant step toward integrating ultrafast optical control with MTJ technology.

Rate Equation for the Transfer of Interstitials across Interfaces between Equilibrated Crystals

2026-07-15T19:44:43Z

This work inspects the thermally activated transfer of solute particles across the interface between two interstitial solid solution phases that equilibrate internally by fast diffusion on conserved arrays of sites. When each phase is considered as an ergodic ensemble of particles, statistical mechanics predicts the occupancy of the transition states at equilibrium to depend on the barrier energy and on the chemical potentials and vacancy fractions in each of the phases. A rate law for the non-equilibrium interfacial transfer, based on a constant transition probability between activated states, naturally satisfies the principle of detailed balance. Contrary to Butler-Volmer-type laws, values of the particle chemical potentials enter explicitly rather than through their difference. This, along with the dependency on the vacancy fractions, implies here an exchange flux density that depends explicitly on the compositions at equilibrium. The results can explain experimental observations of a drastic slow-down in the charging of metal hydrides near phase transformations or miscibility-gap critical points.