https://arxiv.org/api/u2xLHjuFQ9tGO8sLAHKpsYtD7qg2026-09-11T18:46:29Z112228015http://arxiv.org/abs/2609.11927v1Effective Ionic Valence and Local Magnetic Moment in Kagome Superconductors2026-09-10T17:59:26ZIn order to understand the unexpected similarity and the correlated behavior in kagome superconductor families AV$_3$Sb$_5$ (A = K, Rb, Cs) and ATi$_3$Bi$_5$ (A = Rb, Cs), we investigate the Hartree-scale local electronic structure of these systems. Our result indicates that V and Ti ions are both of 2+ valence such that the corresponding itinerant carrier densities are similar, and the difference in electron count is instead reflected in their quantum fluctuating ionic magnetic moments. However, due to the frustrated lattice geometry of these materials, such local moments are difficult to experimentally observe via standard probes. For verification, we systematically introduce nonmagnetic Sn impurities to locally relieve the geometric frustration and experimentally demonstrate the existence of well-defined local magnetic moments via magnetic susceptibility and muon spin rotation or relaxation ($μ$SR) measurements. All experiments discover a systematic increase of magnetic susceptibility upon increasing nonmagnetic impurity level. Our discovered ionic moments suggest a paradigm shift from the existing itinerant carrier-only picture to one incorporating strong correlation from local ionic spins. The associated interatomic and local-itinerant correlations offer a solid ground for the emergence of the observed rich correlated behavior in this new family of superconducting materials.2026-09-10T17:59:26Z17 pages, 11 figuresPhys. Rev. X 16, 031064 (2026)Ruoshi JiangZi-Jian LangYuzki OeyAndrea Capa SalinasStephen D. WilsonYongwei LiIlya ShipulinYiwen ZhangDeng HuZhiwei WangHans-Henning KlaussZurab GuguchiaVadim GrinenkoWei Ku10.1103/t5nf-jksrhttp://arxiv.org/abs/2603.12898v2Neutron-Induced Enhancement of Ion Transport Through Lithium-Ion Battery Materials2026-09-10T17:51:33ZPolycrystalline solid-state ionic conductors (SSICs) are essential energy materials for all-solid-state Li-ion batteries. To date, achieving a room-temperature ionic conductivity of solid electrolytes comparable to that of their liquid counterparts remains a critical challenge. Here, we experimentally demonstrate that thermal neutron irradiation can offer an innovative strategy in that neutron-induced modification in an SSIC model (LiBO$_{2}$ as an effective cathode coating) can facilitate ion transport through the material, enhancing its ionic conductivity. The central concept is that high-flux ($\sim 10^{9}\text{ neutrons}\cdot \text{cm}^{-2}\cdot \text{s}^{-1}$) thermal neutrons ($\sim \text{25 meV}$) selectively transmute strong neutron absorbers [which are $^{10}$B (3840 barns) and $^{6}$Li (940 barns) isotopes and present in their natural abundances of $\sim 19.9\%$ and $\sim 7.5\%$, respectively, in polycrystalline grains of LiBO$_2$] to generate lattice vacancies without compromising their crystallographic long-range order. In addition, by-product gamma photons emitted from $^{10}$B transmutation free electrons to stop atomic displacement and simultaneously neutralize the space charge built up by positively-charged oxygen vacancies at grain boundaries. As a result, the ionic conductivity is increased by nearly 20\% for the grains and more than 80\% for the grain boundaries. This study validates theoretical predictions and highlights a vital strategy for boosting ion transport in ionic solids. Overall, this novel approach establishes a new revenue for broader applications and greater enhancements of advanced functional materials in their related solid-state ionic devices, including all-solid-state lithium-ion batteries.2026-03-13T11:06:35Z41 pages, 10 figures,2 tablesRSC Energy & Environmental Science (2026)Ha M. NguyenCarson D. ZiemkeDavid StallaTymofii PieshkovThi-Hien TruongMin SuBikash SahaNarendirakumar NarayananCarlos WexlerJohn GahlYangchuan XingThomas W. Heitmannhttp://arxiv.org/abs/2609.11881v1Low temperature thermodynamics of $S_{\mathrm{eff}}=1/2$ triangular lattice quantum spin liquid candidate TlYbS$_2$2026-09-10T17:48:43ZGeometrically frustrated triangular-lattice antiferromagnets exhibit a delicate competition between magnetic order and quantum spin liquid (QSL) behavior, with the Yb-based delafossite family $A$Yb$X_2$ providing a structurally clean platform for exploring this physics. Here, we report a comprehensive study of single-crystal TlYbS$_2$ using DC magnetization, AC susceptibility, electron spin resonance (ESR), and specific heat measurements extending from room temperature to the millikelvin regime. Single-crystal X-ray diffraction confirms a trigonal $R\bar{3}m$ structure comprising well-separated triangular layers of Yb$^{3+}$ ions with no detectable site disorder. At zero field, a weak thermodynamic anomaly is observed near $530$ mK, which may indicate the onset of a weakly ordered state similar to that reported in KYbSe$_2$. Below $300$ mK, the zero-field magnetic specific heat follows $C_{\rm m}\propto T^{1.8}$, close to a quadratic temperature dependence, in contrast to the linear temperature dependence reported for the sister compound TlYbSe$_2$, which has been described in terms of the interplay between spinons and thermally excited gauge-flux excitations. Magnetization and ESR measurements establish pronounced easy-plane magnetic anisotropy, with $g_\perp/g_\parallel \approx 6.9$. The anomaly near $530$ mK exhibits a strongly anisotropic response to magnetic field. For $H\perp c$, it remains visible up to approximately $2$ T and continuously evolves toward a field-induced ordered phase above approximately $2.5$ T, followed by a sequence of field-induced phases that includes a $1/3$ magnetization plateau between approximately $5$ and $8$ T and full polarization near $17$ T. In contrast, for $H\parallel c$, the anomaly weakens and is suppressed near $3$ T, consistent with the recently reported confinement--deconfinement transition from an ordered state to a field-induced QSL.2026-09-10T17:48:43Z11 Pages, 5 figuresBishnu P. BelbaseArjun UnnikrishnanPiyush ChhallareMohan B. NeupaneEun Sang ChoiSebastian ErdmannMuhammad U. AkbarMamoun HemmidaH. -A. Krug von NiddaPhilipp GegenwartArnab Banerjeehttp://arxiv.org/abs/2609.11869v1Sparse data limit what a mechanistic corrosion model can predict2026-09-10T17:42:52ZMechanistic corrosion models are routinely fitted with four to six parameters to a few measurements and extrapolated across service lifetimes, yet whether the data determine them is rarely tested. We identify a reduced point defect model for the duplex oxide on Nb-stabilized AISI 347 in simulated boiling-water-reactor water from published depth profiles at three exposure times, by differentiable inversion graded against a closed-form reference. Profile likelihood, a 1000-member bootstrap and a prior-relaxation test agree that one of the five parameters is undetermined and a second only weakly so, and that 95% of the fit statistic rests on three chromium points. The kinetics track an empirical power law over the calibration window but diverge from it by a factor of 3.5 to 6.3 at ten years, outside the propagated uncertainty band. That separation, not the thickness it brackets, is what these data determine; an exposure near 3000 hours would resolve it.2026-09-10T17:42:52ZConrard Giresse Tetsassi Feugmohttp://arxiv.org/abs/2609.11862v1High-Temperature ferromagnetism from site-selective filling in (Fe,Ni)$_{6-δ}$GeTe$_2$2026-09-10T17:41:10ZThe discovery of high-temperature ferromagnetism in the metallic van der Waals (vdW) system Fe$_N$GeTe$_2$ has brought two-dimensional (2D) magnets into technologically relevant temperature scales. Specifically at N = 5, dilution of magnetic moments by nickel substitution counterintuitively achieves a record high Curie temperature of 478~K. Unraveling the origin of this nickel-substitution-induced enhancement is complicated by the compound's structural complexity, coexistent itinerant and local magnetic contributions, and mesoscopic compositional domains. Through coordinated structural and electronic characterization, we identify that the high-T$_C$ magnetic phase arises from a strain-stabilized Fe$_6$GeTe$_2$ nano-precipitate. Combining first-principles calculations and spin- and angle-resolved photoemission spectroscopy (ARPES), we uncover a site-specific electronic landscape in which interior iron atoms primarily host localized moments while the outer iron atoms neighboring the tellurium layers produce spin-polarized itinerant carriers that cross the vdW gap. The large energy cost associated with homogeneous nickel substitution is found to favor the spontaneous precipitation of the crystallographically and electronically ``clean'' high-T$_C$ phase. Finally, we compare metal-rich vdW magnets with binary magnetic alloys, and discuss the unifying roles of nano-precipitates in stabilizing otherwise unattainable bulk phases. Our work provides mechanistic insights into the record-high T$_C$ ferromagnetism in (Fe,Ni)$_{5+δ}$GeTe$_2$, establishing a rigorous foundation for the atomic engineering of vdW magnetic metals informed by direct electronic signatures.2026-09-10T17:41:10Z16 pages, 8 figuresTyler L. WernerDepartment of Applied Physics, Yale University, New Haven, USAJonathan T. ReichanadterDepartment of Physics, University of California, Berkeley, Berkeley, USADepartment of Electrical Engineering and Computer Science, University of California, Berkeley, Berkeley, USAXiang ChenDepartment of Physics, University of California, Berkeley, Berkeley, USAMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USAPranab K. NagDepartment of Physics, Yale University, New Haven, USAEnergy Sciences Institute, Yale University, West Haven, USALuna Y. LiuDepartment of Applied Physics, Yale University, New Haven, USAYu-Tsun ShaoSchool of Applied and Engineering Physics, Cornell University, Ithaca, USAMork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, USAHongrui ZhangDepartment of Materials Science and Engineering, University of California, Berkeley, Berkeley, USAMingyang GuoDepartment of Physics, Boston College, Chestnut Hill, USAWenxin LiDepartment of Applied Physics, Yale University, New Haven, USAZhibo KangDepartment of Applied Physics, Yale University, New Haven, USAHan WuDepartment of Physics and Astronomy, Rice University, Houston, USARice Center for Quantum Materials, Rice University, Houston, USAMakoto HashimotoStanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, USADonghui LuStanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, USATurgut YilmazNational Synchrotron Light Source II, Brookhaven National Laboratory, Upton, USAElio VescovoNational Synchrotron Light Source II, Brookhaven National Laboratory, Upton, USASung-Kwan MoAdvanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, USABarat AchinuqAdvanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, USAAlexei FedorovAdvanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, USAJacob C. RuffCornell High Energy Synchrotron Source, Cornell University, Ithaca, USAMing YiDepartment of Physics and Astronomy, Rice University, Houston, USARice Center for Quantum Materials, Rice University, Houston, USAQiong MaDepartment of Physics, Boston College, Chestnut Hill, USASchiller Institute for Integrated Science and Society, Boston College, Chestnut Hill, USADavid A. MullerSchool of Applied and Engineering Physics, Cornell University, Ithaca, USAKavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, USAEduardo H. da Silva NetoDepartment of Applied Physics, Yale University, New Haven, USADepartment of Physics, Yale University, New Haven, USAEnergy Sciences Institute, Yale University, West Haven, USARobert J. BirgeneauDepartment of Physics, University of California, Berkeley, Berkeley, USAMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USAJeffrey B. NeatonDepartment of Physics, University of California, Berkeley, Berkeley, USAKavli Energy Nanosciences Institute at Berkeley, Berkeley, USAYu HeDepartment of Applied Physics, Yale University, New Haven, USAhttp://arxiv.org/abs/2609.11861v1High-fidelity k$\cdot$p representations of first-principles electronic band structures through covariant renormalization2026-09-10T17:40:55ZThe k$\cdot$p method can be applied directly to first-principles energies and momentum matrix elements, but the resulting models converge slowly with the number of bands and are inexact wherever the underlying Hamiltonian is nonlocal. We show that both limitations can be largely removed by renormalizing the eigenvalue spectra of the Hermitian momentum matrices. These spectra are gauge invariant, and are identical for symmetry-related Cartesian components, hence scaling the recurring magnitudes provides a modest set of parameters that preserves degeneracies and crystal symmetry without needing to construct a symmetry-adapted basis. We choose to renormalize the models against reference eigenvalues and band velocities on rays out of a high-symmetry point. For GaP, a 15-band model can reproduce the band structure in the near-gap reference regions within a few meV. For zincblende and wurtzite AlN, similar accuracy requires 30- or 66-band models, which in the case of zincblende is traced to the strong warping in the [110] direction. The scheme readily generalizes to rocksalt PbTe, which includes spin-orbit coupling, and has L-centered valence and conduction band extrema. Further, we demonstrate, for GaP, how compact four-band Hamiltonians can be obtained by downfolding within the same renormalization scheme. Moreover, by changing the fitting regime to encompass the entire Brillouin zone, the scheme can be used to generate full-zone models that reproduce the density of states. The practical utility is illustrated with a 59-band k.p model for GaP, which can be evaluated on meshes far denser than the reference calculation, that in turn can be used both to resolve fine features in the density of states and to compute the hole conductivity at low temperature.2026-09-10T17:40:55Z9 pages, 10 figures, 1 tableKristian Berlandhttp://arxiv.org/abs/2609.11816v1Piezomagnetism in a model cubic noncollinear altermagnet2026-09-10T17:10:08ZAltermagnets constitute a distinct class of magnetic materials that combine compensated magnetic order with spin-polarized electronic bands, hence carrying characteristics of both antiferromagnets and ferromagnets. Piezomagnetism - the linear relationship between lattice strain and a net magnetic moment - has emerged as smoking-gun evidence of altermagnetism that distinguishes it from antiferromagnetism. Here, we uncover a large piezomagnetic response in MnTe2, a cubic altermagnet with a noncollinear spin arrangement and weak spin-orbit coupling. We combine dilatometry with nuclear magnetic resonance, a bulk local probe, to observe signatures of both direct and inverse piezomagnetism consistent with symmetry considerations and first-principles calculations. The dilatometry measurements reveal a shear deformation proportional to an applied magnetic field, while magnetic resonance detects a ferromagnetic moment induced by shear strain. The respective results for the piezomagnetic coupling strength are in good agreement, and they are captured by first-principles results. These findings for simple binary MnTe2 position this material as a model altermagnet, demonstrate the utility of nuclear magnetic resonance in investigations of piezomagnetism, and open new avenues for multimodal strain and magnetic-field control in spintronic and memory applications.2026-09-10T17:10:08Z15 pages, 8 figuresSudarshan SharmaLuca BuiarelliRichard SpiekerIvan JakovacDamjan PelcTuran BirolMartin Grevenhttp://arxiv.org/abs/2512.02380v2Coupled plastic strain- and stress-induced phase transformations and microstructure evolution in Fe-7%Mn alloy in a dynamic rotational diamond anvil cell2026-09-10T16:15:35ZStudies of severe plastic deformation (SPD), microstructure evolution, and plastic strain-induced phase transformations (PTs) are crucial for various fundamental and applied disciplines and phenomena. However, they are performed either quasi-statically or at low strain rates and pressures. Here, in situ experiments in a dynamic rotational diamond anvil cell (dRDAC) on SPD and BCC<->HCP PTs at pressures up to 27.6 GPa, rotation rates up to 1,500 RPM, and strain rates up to 2,299/s are performed, considering Fe-7%Mn alloy as an example. Strong plastic straining leads to a unique mechanism and kinetics with simultaneous direct and reverse PTs, which has not been studied for any material. For quasi-static loading, we determine the kinetic parameters for strain-induced direct-reverse PTs and the stationary volume fraction $c$ versus pressure. During torsion at 1,000 and 1,500 RPM, $c$ does not change. After torsion stops, 51 minutes later, it increases by 31% at 1,000 RPM and $c$->0, 7 minutes later at 1,500 RPM. These findings contradict the general wisdom that strain-induced PTs occur only during straining and are governed by strain, independent of time; they reveal an alternative mechanism. It is revealed that the crystallite size of ~28(6) nm, microstrain ~0.0035(8), and dislocation density ~1.3(6)x$10^{15}$/$m^2$ in the HCP phase are steady during static compression and dynamic torsion, during and after the PT, and after torsion. These parameters are independent of pressure, plastic strain tensor, its path, strain rates, and $c$. The results obtained open fundamental research on combined strain- and stress-induced PTs and microstructure evolution under dynamic SPD and high pressure, with various important applications.2025-12-02T03:44:54Z63 pages, 17 figures, Tables 14Sorb YesudhasMrinmay SahuValery I. LevitasDean SmithAniket SinghJeffrey T. Lloydhttp://arxiv.org/abs/2605.28250v2Taming quantum interference: a route to high electrical conductance in carbon nanotube assemblies2026-09-10T16:10:54ZIn nanostructured networks, transport is governed by junctions between neighbouring building blocks. Improving their alignment and removing defects is the intuitive route to better electron transport. At low temperatures, when transport becomes coherent, a junction cannot always be reduced to a single effective resistance, because electron-wave interference can strongly enhance or suppress transmission even in nominally ideal junctions. Using carbon nanotube (CNT) networks as a model system, we explore coherent transport through experimentally relevant junctions, from single and multiple single-walled CNT (SWCNT) contacts to double-walled CNT (DWCNT) and multi-walled CNT (MWCNT) junctions, with atomistic tight-binding non-equilibrium Green's-function calculations, also under a perpendicular magnetic field. We use analytically solvable minimal models to identify transport regimes expected for quasi-1D nanoscale junctions, and an electron-waveguide picture to interpret their CNT-specific manifestations. For single SWCNT--SWCNT junctions, high-transmission windows are set mainly by overlap length, doping and magnetic field. Gateway states can enhance conductance when some CNT subbands are gapped, and in some cases a magnetic field can restore transmission by lifting an interference blockade. In more complex architectures, added paths become selective: multi-junctions generate resonant filtering, while additional walls redistribute transmission instead of acting as independent channels. DWCNT junctions remain outer-wall dominated and SWCNT-like, whereas MWCNT junctions redistribute transmission among coupled walls and show a more complex field response. Our ultrahigh-field measurements likewise show lower, more field-sensitive conductance in MWCNT than SWCNT fibres. This work turns microscopic interference mechanisms into design principles for high-conductance, field-stable CNT conductors.2026-05-27T10:00:52Z11 figures in main, 11 figures in SI; next magnetotransport manuscript after arXiv:2605.02295Nanoscale, 2026Teresa KulkaAgnieszka E. Lekawa-RausJohn S. BulmerKrzysztof KoziolFedor F. BalakirevIrina V. LebedevaJacek A. MajewskiMagdalena MarganskaKarolina Z. Milowska10.1039/D6NR02332Khttp://arxiv.org/abs/2609.11755v1Device Engineering and Performance Optimization of Cu2NiGeS4 Thin-Film Solar Cells with In2S3/MoTe2 Charge-Selective Layers: A Computational Study2026-09-10T16:09:19ZThe pursuit of efficient and sustainable thin-film photovoltaics increasingly demands absorber materials that combine strong optical absorption with earth-abundant and environmentally benign constituents. Cu2NiGeS4 (CNGS) has emerged as a promising quaternary chalcogenide absorber owing to its favorable optoelectronic properties and high absorption coefficient, yet its photovoltaic potential remains comparatively underexplored, particularly in conjunction with optimized charge-selective layers. Here, we introduce and comprehensively investigate an CNGS-based solar-cell architecture using SCAPS-1D, with In2S3 and MoTe2 serving as the electron and hole-transport layers respectively. The analysis of energy-band profiles, electric fields, carrier distributions, and generation-recombination characteristics reveals the mechanisms governing carrier separation and extraction across the heterojunctions. Systematic optimization of layer thickness, doping density, bulk and interface defect densities, recombination coefficients, parasitic resistances, temperature, and illumination intensity identifies the key factors limiting device performance. The optimized device is predicted to achieve a power conversion efficiency (PCE) of 28.44% with a open-circuit voltage (VOC) of 0.984 V, short-circuit current density (JSC) of 34.39 mA/cm2, and fill factor (FF) of 84.04%, under AM1.5G illumination at 300 K. This simulated efficiency exceeds the previously reported 6.25-21.17% range for CNGS-based solar cells considered in this study. The findings establish In2S3/CNGS/MoTe2 as a promising platform for next-generation thin-film photovoltaics and provide physically grounded design guidelines for absorber optimization, interface engineering, and future experimental realization.2026-09-10T16:09:19ZMd Tashfiq Bin KashemHasib Md Abid Bin Faridhttp://arxiv.org/abs/2603.10954v2Importance of nonlinear long-range electron-phonon interaction for the carrier mobility of anharmonic halide perovskites2026-09-10T15:45:16ZThe interaction between the electrons and the lattice vibrations in a solid is responsible for various important effects, such as formation of polarons, temperature dependent bandgaps, phonon-limited carrier transport, and conventional superconductivity. Most works assume a linear electron-phonon interaction, where the electron only interacts with one phonon at a time. However, the validity of this assumption has not been verified in polar anharmonic materials, where large ionic displacements may invalidate the assumption of linear interaction. Here, we show that nonlinear electron-phonon interactions contribute significantly to the finite-temperature electron mobility of the inorganic lead halide perovskite CsPbI$_3$. The effect of nonlinear interaction is taken into account using the recently derived expression for the long-range part of the one-electron-two-phonon matrix element. We calculate the electron mobility from first principles within the self-energy relaxation-time approximation, treating the electron-phonon coupling in the long-range approximation. Despite these approximations, the calculated mobilities are in good agreement with the available experimental data, while enabling us to isolate and quantify the contribution of nonlinear electron-phonon interactions relative to the conventional linear coupling. We find that the one-electron-two-phonon interaction modifies the temperature dependence of the mobility in CsPbI$_3$ and reduces its room-temperature value by about 10\%. This sizeable contribution results from the combined effects of strong lattice anharmonicity and large thermal phonon populations, the latter being enhanced by the low phonon frequencies associated with the heavy constituent atoms. These results show when nonlinear electron-phonon interactions become relevant, and indicate they should be considered for finite-temperature properties of halide perovskites.2026-03-11T16:43:23Z8 pages main manuscript, 18 pages supplemental material Resubmission of previous version to PRB Letters. Major changes: (1) added comparison to experimental data, see Fig. 3. (2) validation of the long-range approximation, see new section S3 in the Supplemental MaterialMatthew HoutputIngvar ZappacostaWilliam WenbornSerghei KliminSamuel PoncéJacques TempereCesare Franchinihttp://arxiv.org/abs/2605.30128v2Towards exascale fully relativistic pseudopotential density functional theory calculations enabled by mixed-precision computation and compressed-communication using residual based subspace iteration2026-09-10T15:35:32ZMaterials exhibiting noncollinear magnetism or strong spin-orbit-coupling underpin many spintronic and topological applications, but their simulations require complex two-component spinors and costs substantially more than scalar density functional theory (DFT). We present a GPU-centric exascale finite-element DFT framework with noncollinear magnetism and spin-orbit-coupling, combining (i) adaptive higher-order finite-element discretization, (ii) a matrix-free Poisson solver, (iii) residual-based Chebyshev filtered subspace iteration (R-ChFSI) for sparse generalized eigenproblems, (iv) R-ChFSI-enabled mixed precision computation with block floating-point compressed MPI communication, and (v) communication-efficient band partitioning. R-ChFSI permits inexact matrix-multivector products and $4\times$--$6.4\times$ compression of communicated data relative to FP64 while preserving double-precision robustness and reducing computation and data movement. Results demonstrate strong scaling on Aurora and Frontier, with up to $3.4\times$ faster Chebyshev filtering. On Aurora, total self-consistent-field (SCF) solve wall time reduces by $2\times$. An 800-node (9,600-GPU) calculation demonstrates fully relativistic pseudopotential DFT for $\sim$80,000 electrons in under 7 minutes per SCF iteration.2026-05-28T15:58:29Z12 pages, 7 figuresNikhil KodaliGourab PanigrahiNishant GuptaKartick RamakrishnanSundaresan GRudra PanchSambit DasVishwas RaoPhani Motamarrihttp://arxiv.org/abs/2609.11666v1Competition between vacancy creation and filling in defect-engineering of hBN2026-09-10T15:04:41ZHexagonal boron nitride (hBN) has recently become the focus of intense research as a material that can host quantum emitters. It is known that such emission is related to point defects, but in order to conclusively correlate specific defects to their spectra, having control over the defect creation mechanism is required. Here, we prepare freestanding, monolayer hBN samples and irradiate them with ultra-low-energy (150 eV) Ar+ ions. The samples are characterized before and after irradiation via scanning transmission electron microscopy to assess the defect density and distribution. Contrary to what analytical potential molecular dynamics simulations have predicted, we predominantly observe boron single vacancies after ion irradiation, followed by double vacancies at half the count. Moreover, we also observe that vacancy filling with Si and C impurity atoms plays a more significant role in the created defects than previously assumed, potentially posing a problem for selective creation of quantum emitters in hBN.2026-09-10T15:04:41Z22 pages, 13 figures (including the supplement)Shrirang ChokappaManuel LaängleBarbara Maria MayerVladimir Zoba\vcJacob MadsenDiana PropstDavid LamprechtPhilipp IrschikArixin BoClara KoflerVinzent HanaFabian KraftClemens ManglerLado FilipovicToma SusiJani Kotakoskihttp://arxiv.org/abs/2603.14446v3Self-Assembled H2NC Molecular Lattices as a Platform for Tunable Quantum Superlattices2026-09-10T14:47:58ZCompared to van der Waals moiré systems, molecular assembly has emerged as an exciting alternative platform for superlattice engineering via heterointegration. The electronic properties of the self-assembled square lattice monolayer molecular crystal of metal-free naphthalocyanine (H$_2$Nc), in particular the electronic band dispersion and their tunability by metal substrates, remain less explored. Using density functional theory, supported by angle-resolved photoemission and scanning tunneling microscopy, we compare the electronic structure of a free-standing H$_2$Nc monolayer with that of H$_2$Nc lattice assembled on noble metal substrates. In the free-standing film, we identify both nearly flat, molecule-localized states and more dispersive bands, and we show that each can be compactly described by an anisotropic tight-binding Hamiltonian that yields band-resolved hopping anisotropies. We further show theoretically the wide tunability in the inter-site hopping and Coulomb interaction based on dielectric and screening environment, and show two experimental realizations using Ag(100) and Au(111) substrates. On Ag(100), orbital hybridization between molecular frontier states and the substrate drives finite spectral weight at the Fermi level and local interfacial polarization. This hybridization enhances the effective intermolecular hopping roughly thirty-fold, drastically reducing $U/t$. Complementary angle-resolved photoemission spectroscopy resolves substantial interfacial charge redistribution and enhanced bandwidth of the HOMO band, consistent with theoretical predictions. These results clarify how metal substrates and gates convert H$_2$Nc from isolated molecules into a tunable 2D lattice, and highlight molecular superlattices as a promising platform in which the effective interaction parameters can be engineered over a wide range.2026-03-15T15:43:17Z33 pages, 12 figuresAdrian BahriZhibo KangZiyan ZhuEric I. AltmanYu HeChunjing Jiahttp://arxiv.org/abs/2609.11640v1High-throughput thermodynamic screening of oxide-scale adhesion across the CoCrFeMnNiAl high-entropy alloys2026-09-10T14:46:51ZOne significant benefit of reactive element (RE) additions is the colossal improvement in oxide-scale retention during high-temperature oxidation. Selecting optimal RE dopants in high-entropy alloys remains empirical because the relevant thermodynamic landscape is inaccessible to first-principles at the required compositional resolution. Here we apply the macroscopic atom model, coupled with McLean isotherm and Guttmann models, to screen adhesion across nine CoCrFeMnNiAl sub-families at \ce{Cr2O3} and \ce{Al2O3} interfaces, ranking five REs (Hf, Y, Zr, La, Ti) for segregation, adhesion enhancement, and sulfur displacement. The screening reveals an oxide-dependent ranking inversion, with Hf dominating at \ce{Cr2O3} and La dominating at \ce{Al2O3}, driven by the interplay between RE--O and RE--matrix interaction enthalpies. Mn-containing alloys exhibit intrinsic sulfur resistance, consistent with their experimentally observed oxidation characteristics. A sulfur immunity phase diagram identifies compositions with Al~+~Mn~$\gtrsim$~25~at\% as thermodynamically immune to S-induced adhesion loss. All crossover concentrations collapse onto a universal exponential governed by the segregation enthalpy difference, providing a transferable design rule. Inverse design identifies \ce{Co16Cr16Fe16Ni16Al35} as the optimal S-immune composition with $W_\text{sep} = 5.95$~J/m$^2$ without RE doping.2026-09-10T14:46:51ZDennis BoakyeChuang Deng