https://arxiv.org/api/nRpVIt/MVNrGurKYy1kGmqecKdo 2026-09-11T20:01:48Z 103263 15 15 http://arxiv.org/abs/2609.11459v1 2026-09-10T12:32:32Z

Copper(I) iodide (CuI) is a wide-bandgap semiconductor crystallizing in the 3D $γ$-phase under ambient conditions; its layered van der Waals bulk phase $β$-CuI is stable only between 643 and 673 K. The two-dimensional (2D) h-CuI form has been obtained via liquid-phase exfoliation of mechanochemically prepared precursors and via encapsulation between graphene sheets, whereas bottom-up growth of 2D h-CuI on open surfaces has not yet been demonstrated. Here, we report a vapor-phase synthesis of h-CuI directly on low-defect, large-area monolayer and within bilayer reduced oxo-graphene (r-oxo-G) at low temperatures. Using a copper TEM grid as the solid-state precursor for copper, HI-vapor exposure at 40 $°$C initiates nucleation, while annealing at 180 $°$C promotes the growth of extended h-CuI domains. Aberration-corrected HRTEM resolves the atomic structure, local twist angles, and lattice anisotropy of the CuI/r-oxo-G nanohybrid, while STEM-EDX yields a Cu:I ratio consistent with 1:1. First-principles calculations show that van der Waals adhesion to graphene stabilizes the supported hexagonal layer. Under the presented low-temperature precursor conditions, pathways for nucleation of the $γ$-phase are not available, allowing the hexagonal phase to form selectively at the graphene interface. Ab initio molecular dynamics simulations show that the heterostructure retains its hexagonal lattice order at 600 K, including on an open monolayer graphene support. The lateral extent of the growth is limited mainly by remaining interfacial adsorbates. These results establish a route to metastable 2D h-CuI on a chemically inert graphene template, which may be useful for wide-bandgap electronic and optoelectronic devices.

2026-09-10T12:32:32Z 26 pages, 6 figures, Includes Supporting Information with 5 figures and 7 tables David Kaiser Guobin Jia Janis Köster Sadegh Ghaderzadeh Christian E. Halbig Siegfried Eigler Andrey Turchanin Benjamin Dietzek-Ivanšić Arkady V. Krasheninnikov Jonathan Plentz Elena Besley Ute Kaiser http://arxiv.org/abs/2608.17125v3 2026-09-10T12:18:27Z

Solid-state refrigerators using Normal-metal/Insulator/Superconductor (NIS) junctions have previously demonstrated excellent electron cooling but limited ability to cool phonons. The energy gap of the superconductor is used as an energy filter to allow higher than average energy electrons to preferentially tunnel from the normal-metal through the insulator into the superconductor where they travel as quasi-particles. Typically, the heat is moved and work is done to deposit hot quasi-particles into a normal-metal quasi-particle trap for rejection to the next refrigeration stage. Realizing that (1) the quasi-particles flow diffusively, driven by a concentration gradient in the electric field-free superconductor, and (2) that the undesirable backwards leaking of heat from the hot-side trap can be reduced by engineering the geometry and materials at the superconductor-to-trap interface, enhanced cooling can be achieved. Fabrication of the refrigerator was accomplished using a tungsten and titanium-tungsten alloy as the cold-side normal-metal, aluminum oxide as the insulator, aluminum as the superconductor, and gold as the trap, with the cold-side NIS portion being attached to the hot-side gold trap by bump bonding. The refrigerator consisted of 1121 junction pairs, each pair being an SINIS unit, all electrically connected in series. Using this we have measured the effective phonon temperature of a 3.9 mm x 3.9 mm x 0.65 mm silicon chip driven down to 70 mK from a bath temperature of 120 mK, and down to 174 mK from a 271 mK rejection temperature (a cooling of -97 mK). This is the first demonstration of the sub 1 K cooling of an entire silicon chip using NIS junctions.

2026-08-17T21:02:25Z Robert M. Young Zachary Stegen John X. Przybysz Edward R. Engbrecht Aaron A. Hathaway Justin C. Hackley Kirby B. Myers Christian C. Thorpe Aurelius L. Graninger Robert Miller Diego A. Morales Roberto D. Carcamo Glen Walters Jeric P. Sarad Nicholas F. Pleim Seth Whitsitt Joshua T. Shipman Anil Erol Melissa G. Loving Evan Donohue Corey A. Kegerreis Benjamin Dalfort Moe S. Khalil Christopher Pinion Randi Jaramillo John Milinichik Sandro J. Di Giacomo Thomas Zodda Nilesh Tralshawala Gregory R. Boyd Jonathan M. Cochran Katherine A. Maddock Michael P. De Feo Aaron A. Pesetski Marc E. Sherwin http://arxiv.org/abs/2609.11441v1 2026-09-10T12:11:38Z

We report the identification and characterization of a new compound Fe0.68Pd0.80Te with an α-Fe1+xTe prototype structure. Different from the Fe-square net and minor occupancy of interstitial Fe-sites in Fe1+xTe, Fe0.68Pd0.80Te is featured by a Pdsquare net and near 68% occupancy of the corresponding interstitial Fe-sites. Furthermore, noncontact atomic force microscopy and X-ray diffraction provide evidence for the existence of a 3*3*3 Pd-vacancy order in this layered material. A spin-glass ground state below Tg 40 K is identified via magnetic characterization. Electrical transport measurements show that Fe0.68Pd0.80Te is a semiconductor with a very small band gap below 10 meV. It has weak negative magnetoresistance and holelike charge carriers below room temperature. Our results demonstrate its potentials for further exploring various quantum phenomena.

2026-09-10T12:11:38Z 8 pages, 4 figures Inorg. Chem. 2026, 65, 20285-20292 Bingxian Shi Manyu Wang Chenglin Shang Yanyan Geng Yangyang Fan Xiaoxiao Pei Li Huang Daye Xu Juanjuan Liu Jinchen Wang Hongxia Zhang Hongliang Wang Lijie Hao Rui Xu Zhongyi Lu Zhihai Cheng Peng Cheng 10.1021/acs.inorgchem.6c02103 http://arxiv.org/abs/2609.11397v1 2026-09-10T11:31:50Z

Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers high speed, ultrahigh endurance, and compatibility with advanced semiconductor processes, making it a promising candidate for next-generation nonvolatile memory. However, intrinsic bias fields in magnetic tunnel junctions (MTJs), originating from reference-layer stray fields and interlayer coupling, cause asymmetric critical switching currents and increased energy consumption. Existing compensation approaches usually introduce additional magnetic layers into the MTJ stack, which increases fabrication complexity and limits wafer-scale integration. Here, we propose a bias-compensation strategy without modifying the MTJ stack by engineering local stray magnetic fields through magnetic filling materials in vertical interconnect access (VIA) channels during the back-end-of-line process. Micromagnetic simulations show that the proposed magnetic filling layer can provide the required auxiliary field for deterministic switching and significantly suppress write-current asymmetry. By optimizing the MTJ position relative to the magnetic filling structure, the write-current bias ratio is reduced from 21.6% in the conventional design to 1.3%. The approach is also applicable to in-plane magnetic anisotropy SOT-MTJs, reducing the bias ratio from 19.8% to -0.2%. Scaling analysis further demonstrates that the compensation effect remains effective when the device size is reduced to 20% of the original dimension (MTJ diameter approximately 10 nm), indicating its potential for high-density SOT-MRAM integration.

2026-09-10T11:31:50Z English translated version of the original Chinese paper published in Acta Physica Sinica. 17 pages, 13 figures, 1 table Acta Physica Sinica 75, 060807 (2026) Jiaxin Liu Yuqing Zhou Guoyi Shi Kaiming Cai 10.7498/aps.75.20251720 http://arxiv.org/abs/2602.23570v5 2026-09-10T11:13:11Z

Lattice-mismatched bilayer graphene self-organizes into a moiré network of one-dimensional domain walls that conduct electrons with low dissipation, attractive for low-power electronics. We show these channels are not always straight: as the lattice relaxes to minimize strain, the network can spontaneously curve into chiral morphology. Atomistic simulations map a phase diagram in which the strain-flexibility balance selects one of three stable domain wall morphologies-straight, mono-chiral, or dual-chiral. Electronic structure calculations show that this morphology controls where low-energy electrons accumulate: straight channels concentrate states at the domain-wall-connecting nodes, while chiral channels shift that weight onto the domain walls themselves. This network geometric switch lets the same moiré material support either localized electronic hot spots or directional conducting channels-two strategies for guiding electrons in low-power graphene devices.

2026-02-27T00:43:40Z 7 pages, 4 figures Xue Yan Kaiyun Chen Yuan Yan Fan Feng Minglei Sun Christian Brandl Jefferson Zhe Liu http://arxiv.org/abs/2509.20163v2 2026-09-10T09:36:40Z

The quantum Hall effect hosts quantum phase transitions in which the localization length, that is the size of disorder-induced bulk localized states, is governed by universal scaling from percolation theory. However, this universal character is not systematically observed in experiments, including very recent ones in extremely clean devices. Here we explore this non-universality by systematically measuring the localization length in broken-symmetry quantum Hall states of graphene. Depending on the nature and gap size of these states, we observe differences of up to a tenfold in the minimum localization length, accompanied by clear deviations from universal scaling. Our results, as well as the previously observed non-universality, are fully captured by a simple picture based on the co-existence of localized states from two successive sub-Landau levels.

2025-09-24T14:30:40Z Aifei Zhang Torsten Röper Manjari Garg Kenji Watanabe Takashi Taniguchi Carles Altimiras Patrice Roche Erwann Bocquillon Olivier Maillet François D. Parmentier http://arxiv.org/abs/2609.11214v1 2026-09-10T08:18:11Z

Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have implemented this technique into Ge quantum well heterostructures, offering a promising avenue to address the critical challenge of charge stability in spin qubit devices. Harnessing the atomic-scale precision of molecular beam epitaxy, we have engineered the band structure of the SiGe top barrier via graded composition modulation, thereby reducing charge accumulation states at the SiGe-dielectric interface and strengthening the effective confinement to the hole gases in the Ge quantum wells. The enhanced charge stability of composition-modulated SiGe/Ge quantum well heterostructures is confirmed in Hall devices, featuring an enlarged stable gate voltage range. We have further fabricated quantum dot devices from the composition-modulated SiGe/Ge quantum well heterostructures and observed remarkably low charge noise with an averaged amplitude of $0.46\,\mathrm{μeV}/\mathrm{\sqrt{Hz}}$ at $1\,\mathrm{Hz}$---the lowest reported value for Ge quantum wells grown on silicon. This exceptional charge stability of the quantum dots persists in the few-hole regime, with no observable voltage drift over $\sim$hours. With reduced charge noise and enhanced energy stability, composition-modulated SiGe/Ge heterostructures exhibit significant potential for applications in building high-performance quantum devices, including spin qubits with a long coherence time.

2026-09-10T08:18:11Z Ding-Ming Huang Jun-Hang Liu Han Gao Jie-Yin Zhang Jian-Huan Wang Fang-Ze Liu Xin-Yu Zhou Yi Luo Bin-Xiao Fu Xiao-Fei Liu Ji-Yin Wang Jian-Jun Zhang H. Q. Xu http://arxiv.org/abs/2509.03026v2 2026-09-10T07:55:55Z

Magnetic tunnel junctions (MTJs) based on ferromagnets are canonical devices in spintronics, with wide-ranging applications in data storage, computing, and sensing. They simultaneously exhibit mechanisms for electrical detection and control of magnetic order through the tunneling magnetoresistance (TMR) and spin-transfer torque (STT) effects, respectively. It was long assumed that neither of these effects could be sizeable in all-antiferromagnetic tunnel junctions (AATJs), since they exhibit no net magnetization. Recently, however, it was shown that AATJs based on chiral antiferromagnets do exhibit TMR due to their non-relativistic momentum-dependent spin polarization and cluster magnetic octupole moment (CMO), which are manifestations of their spin-split band structure. However, the reciprocal effect, i.e., the antiferromagnetic counterpart of STT, has been assumed non-existent due to the total electric current being spin-neutral. Here, we report nanoscale AATJs exhibiting this reciprocal effect, which we term octupole-driven spin-transfer torque (OTT). We demonstrate current-induced OTT switching of PtMn3|MgO|PtMn3 AATJs, exhibiting a TMR value of 363% at room temperature and switching current densities of the order of 10 MA/cm2. Our theoretical modeling explains the origin of OTT in terms of the imbalance between intra- and inter-sublattice spin currents across the AATJ, and equivalently, in terms of the non-zero net cluster octupole polarization of each PtMn3 layer. This work establishes a new materials platform for antiferromagnetic spintronics and provides a pathway towards deeply scaled magnetic memory and room-temperature terahertz technologies.

2025-09-03T05:18:09Z Jaimin Kang Mohammad Hamdi Shun Kong Cheung Lin-Ding Yuan Mohamed Elekhtiar Eric Matt William Rogers Andrea Meo Peter G. Lim M. S. Nicholas Tey Anthony D'Addario Shiva T. Konakanchi Jordan Athas Sevdenur Arpaci Antoine Devincenti Lei Wan Sanjay C. Mehta Nicholas Zogbi Vinod K. Sangwan Jean Anne C. Incorvia Jennifer Fowlie Pramey Upadhyaya Mario Carpentieri Vinayak P. Dravid Mark C. Hersam Jordan A. Katine Gregory D. Fuchs Giovanni Finocchio Evgeny Y. Tsymbal James M. Rondinelli Pedram Khalili Amiri http://arxiv.org/abs/2609.11138v1 2026-09-10T06:29:57Z

The two-dimensional homogeneous electron gas (2D HEG) is a prototype system of fundamental interest that can be realized experimentally over a wide range of densities. Here, we investigate its collective charge excitations at low densities, using time-dependent density functional theory. We demonstrate that, beyond traditional plasmons, new collective excitonic modes emerge for a Wigner-Seitz radius larger than $r_{\mathrm s} \approx 1$. These excitonic modes leave characteristic fingerprints in experimentally accessible quantities, namely, asymmetric peak structures in the loss function and very strong Friedel-like oscillations in the static linear density response that increase when the system approaches a regime of instability. Indeed, at low enough densities the collective modes cross the zero energy axis, indicating an instability of the paramagnetic 2D HEG towards the formation of a charge-density-wave phase with excitonic origin. These findings provide valuable insights for the experimental detection of excitonic collective modes in tunable 2D electron systems and contribute to the fundamental understanding of many-body effects in low-density electron gases.

2026-09-10T06:29:57Z Jakob Wolff Silvana Botti Lucia Reining Matteo Gatti http://arxiv.org/abs/2609.02768v2 2026-09-10T03:44:52Z

Magnetic multipoles have attracted growing interest as order parameters and dynamical degrees of freedom in unconventional magnets, yet it remains unclear how broadly they can emerge as active electronic degrees of freedom. Here, we show that spin-orbit-entangled multiorbital states can host magnetic octupole (MO) degrees of freedom. In Rashba systems, this gives rise to an MO Rashba texture accompanying the J-Rashba texture. Remarkably, spin-orbital entanglement can realize a pure-MO limit in which the spin and orbital-angular-momentum textures vanish while the MO texture remains finite. An applied electric field converts this texture into a nonequilibrium MO polarization through an MO Rashba-Edelstein effect. Around the pure-MO regime, the MO Edelstein response dominates over the conventional spin response, showing that multipolar responses need not be small corrections to dipolar spin physics. Our results establish an interface-based route for electrically generating nonequilibrium multipolar magnetic polarization in spin-orbit-coupled systems.

2026-09-02T16:06:05Z 8+16 pages, 4+3 figures Hojun Lee Seungyun Han http://arxiv.org/abs/2608.22199v3 2026-09-10T03:41:29Z

We consider an infinite one dimensional array of alternating charges embedded in a two-dimensional configuration space and subjected to a weak static electric field transverse to the lattice axis. Expansion of the Coulomb interaction about a lattice site gives a transverse restoring stiffness $κ\propto ζ(3)/L^3$, defining the oscillator length $a_y$, while Bloch periodicity is retained along the lattice direction and the transverse motion is represented in a harmonic basis. The Coulomb matrix elements are governed by the dimensionless scale $η_{r-s}$, which couples the reciprocal-lattice transfer to the transverse oscillator length. A regularized one dimensional extension is also introduced through Coulomb regularization, yielding a finite diagonal offset and an exponentially decaying even-transfer coupling in reciprocal space. Small $η_{r-s}$ yields logarithmic, parity-dependent transverse-state coupling, while large $η_{r-s}$ approaches the one-dimensional Coulomb limit. In the finite-order spectrum, the latter approaches the Kronig Penney reference toward the band edge while retaining distinct Brillouin zone curvature. The formulation therefore identifies two characteristic quantities of the alternating lattice: the transverse restoring stiffness and the one-dimensional Madelung form, while retaining the two dimensional structure required to describe the response to a transverse electric field. Keywords: alternating charge lattice; Bloch states; Coulomb interaction; transverse electric field; regularization; reciprocal space coupling; Brillouin zone spectrum.

2026-08-23T03:26:39Z A revised replacing the previously withdrawn manuscript. Title refined, the current version is substantially expanded with Brillouin-zone analysis and regularization of the one-dimension problem. 16 pages, 2 figures and Glossary included Anand Aruna Kumar http://arxiv.org/abs/2609.11017v1 2026-09-10T02:50:10Z

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

2026-09-10T02:50:10Z J. C. Rodriguez E. E. De Biasi J. I. Facio D. Salomoni S. Auffret R. C. Sousa I. L. Prejbeanu A. Bruchhausen J. Curiale L. Avilés-Félix http://arxiv.org/abs/2609.11015v1 2026-09-10T02:48:53Z

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

2026-09-10T02:48:53Z Hai Wang Woye Pei Ridong Cong Xiaoyan Liu Yuping Tian Kenji Watanabe Teng Yang Takashi Taniguchi Xiangru Kong Weijiang Gong Guowei Zhou Xiaoxi Li Hanwen Wang Jixuan Wu Jiezhi Chen Xiaohong Xu Tongyao Zhang http://arxiv.org/abs/2609.10953v1 2026-09-10T01:22:47Z

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $Γ$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

2026-09-10T01:22:47Z 9 pages, 6 figures Tetsuro Habe http://arxiv.org/abs/2606.29320v2 2026-09-09T22:09:41Z

Physical reservoir computing offers an energy-efficient alternative to conventional neural networks, where the material-specific intrinsic memory capacity in a physical system plays an indispensable role. Substituting temporal memory with spatial degrees of freedom, we demonstrate that the memory capacity can be created extrinsically in systems with no intrinsic memory by exploiting the computational space-time tradeoff. Our approach utilizes multidimensional input nodes to function as a spatial memory axis, thereby replacing the dependency on intrinsic history-dependent dynamics in the reservoir. Our scheme is validated in a multi-terminal quantum dot system, whose discrete energy levels provide strong nonlinearity and complexity crucial for reservoir computing, while its short relaxation time leaves no room for intrinsic memory. Numerically, the quantum dot reservoir with a tunable extrinsic memory shows high performance on both chaotic future prediction and nonlinear transformation tasks. Furthermore, from the analysis of quantum state trajectory acquired from task operations, the geometric understanding of the extrinsic memory capacity, nonlinearity, and complexity is provided and their correlations are systematically investigated.

2026-06-28T10:26:43Z 17 pages, 10 figures Bongsu Kim Oscar Lee Sangjun Jeon Kun Woo Kim